Abstract:Nowadays the development of natural biomaterials as promising building polymers for flexible, biodegradable, biocompatible and environmentally friendly electronic devices is of great interest. As the most common natural polymers, cellulose and its derivatives have the potential to be applied in the devices owing to the easy processing, nontoxicity and biodegradability. Here, write-once-read-many-times resistive switching devices based on biodegradable carboxymethyl cellulose-graphene oxide (CMC-GO) nanocomposite are demonstrated for the first time. The hybridization sites formed by the gelation of CMC and GO molecules contribute to the excellent memory behaviors. When compared with devices base on pure GO and CMC, the device with the Al/CMC-GO/Al/SiO2 structure exhibits brilliant write-once-read-many-times (WORM) switching characteristics such as high ON/OFF current ratio of ˜105, low switching voltage of 2.22 V, excellent stability and durability. What's more, the device shows high flexibility and good resistive switching behaviors even with soft PET substrate (Al/CMC-GO/Al/PET structure). This newly designed cellulose-graphene oxide-based polymer nanocomposites are quite cheap and easy processed for large scale manufacturing of memory devices and can further contribute to future biodegradable data storage applications such as portable stretchable displays, wearable electronics and electronic skins in the coming age of artificial intelligence.

Tetrahedral Amorphous Carbon Resistive Memories with Graphene-Based Electrodes

High-performance Ta2O5-based Resistive Random-Access Memory with Embedded Graphene Quantum Dots and Pt-Ag Composite Active Layer

2D Resistive Switching Memories: Graphene and Related Materials for Resistive Random Access Memories (adv. Electron. Mater. 8/2017)

Resistive Switching Memories In Mos2 Nanosphere Assemblies

Reliable Resistive Switching Behaviour of Ag/Ta2O5/Al2O3/p++-Si Memory Device

Graphene Oxide and Tio2 Nano-Particle Composite Based Nonvolatile Memory

Recoverable Electrical Transition in A Single Graphene Sheet for Application in Nonvolatile Memories

Investigation of Resistive Switching in Graphite-Like Carbon Thin Film for Non-Volatile Memory Applications

Multilevel Resistive Switching in Planar Graphene/Sio2 Nanogap Structures

Resistive Switching Memory Based on Graphene Quantum Dot Composites and its Conductive Mechanism

Graphene-based atomic-scale switches.

Bipolar Resistive Switching in Al/GO-PEDOT:PSS/Pt Memory Devices

Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)

Graphite planar resistive switching memory and its application in pattern recognition

Tunable, Ultralow‐Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene–Oxide Interface

Electronic two-terminal bistable graphitic memories

Highly Improved Performance in Zr0.5Hf0.5O2 Films Inserted with Graphene Oxide Quantum Dots Layer for Resistive Switching Non-Volatile Memory

Fabrication of Carboxymethyl Cellulose and Graphene Oxide Bio-Nanocomposites for Flexible Nonvolatile Resistive Switching Memory Devices.

Molecular Memory with Atomically-Smooth Graphene Contacts

Observation of Resistive Switching in a Graphite/hexagonal Boron Nitride/graphite Heterostructure Memristor

Oxidized Carbon Quantum Dot–graphene Oxide Nanocomposites for Improving Data Retention of Resistive Switching Memory