Tunable, Ultralow‐Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene–Oxide Interface

Min Qian,Yiming Pan,Fengyuan Liu,Miao Wang,Haoliang Shen,Daowei He,Baigeng Wang,Yi Shi,Feng Miao,Xinran Wang
DOI: https://doi.org/10.1002/adma.201306028
IF: 29.4
2014-01-01
Advanced Materials
Abstract:Memristive devices based on vertical heterostructures of graphene and TiOx show a significant power reduction that is up to ∼10(3) times smaller than that of conventional structures. This power reduction arises as a result of a tunneling barrier at the interface. The barrier is tunable, opening up the possibility of engineering several key memory characteristics.
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