Abstract:The non-volatile memory devices based on traditional materials are unable to adapt to the background of the post-Moore era due to high energy consumption and low transmission speed. Therefore, the two-dimensional (2D) materials receive extensive attention on account of their excellent electrical and optical properties. The floating-gate transistors based on MoS2/h-BN/graphene heterojunction possess excellent storage functions. In this paper, the characteristics of MoS2/h-BN/graphene floating-gate transistors are investigated by manufacturing and comparing multiple devices. And the influences of the thickness of the h-BN tunneling layer on the storage functions are also explored. The device with the thickness of h-BN exceed 10 nm obtain the optimal non-volatile and photoelectric storage characteristics. Ultimately, the chosen floating-gate transistor can achieve switching ratio as high as similar to 10(5) at working voltages below 10 V, and also achieve multi-level storage by applying pulses of different amplitudes. And the device has very excellent durability and retention after 1000 cycles working. At the same time, the device also has perfect performance in the process of alternately applying electrical pulses and optical pulses, and finally achieves storage functions of electrical writing and optical erasing. These results prove that the outstanding non-volatile and photoelectric storage characteristics can be effectively achieved in 2D materials heterojunction floating-gate transistors. Therefore, the 2D materials floating-gate transistors will be potential candidate for post-Moore non-volatile memory chip.

A Low-Power Optoelectronic Memory Device Based on MoS 2 /bn/graphene Heterostructure

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS2 /H-Bn/graphene Heterostructure.

Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS 2 /h‐BN/Graphene Heterostructure

Investigation of Non-Volatile and Photoelectric Storage Characteristics for MoS2/h-BN/graphene Heterojunction Floating-Gate Transistor with the Different Tunneling Layer Thicknesses

Tunable and Nonvolatile Multibit Data Storage Memory Based on MoTe2/boron Nitride/graphene Heterostructures Through Contact Engineering

Optoelectronic memory in 2D MoS2 field effect transistor

Mechanoplastic Tribotronic Two-Dimensional Multibit Nonvolatile Optoelectronic Memory

Polarization‐Resolved Broadband MoS2/Black Phosphorus/MoS2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio

Polarization‐Resolved Broadband MoS 2 /Black Phosphorus/MoS 2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio

Optoelectronic Nonvolatile Memories Using Graphene/Hexagonal Boron Nitride/Rhenium Disulfide Heterostructure

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS 2 Channels

High-Performance Photoinduced Memory with Ultrafast Charge Transfer Based on MoS2/SWCNTs Network Van Der Waals Heterostructure

Multibit Optoelectronic Memory in Top‐Floating‐Gated Van Der Waals Heterostructures

Tunable charge-trap memory based on few-layer MoS2.

Memtransistor-like operation of devices made by graphene/h-BN/MoS2 van der Waals heterostructure

Low-voltage Ultrafast Nonvolatile Memory Via Direct Charge Injection Through a Threshold Resistive-Switching Layer

2D Heterostructures Induced Charge Transfer and Trapping for Hybrid Optically and Electrically Controllable Nonvolatile Memory

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van Der Waals Heterostructure.

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Light-erasable Embedded Charge-Trapping Memory Based on MoS2 for System-on-panel Applications