Abstract:Flash memories and semiconductor p-n junctions are two elementary but incompatible building blocks of most electronic and optoelectronic devices. The pressing demand to efficiently transfer massive data between memories and logic circuits, as well as for high data storage capability and device integration density, has fueled the rapid growth of technique and material innovations. Two-dimensional (2D) materials are considered as one of the most promising candidates to solve this challenge. However, a key aspect for 2D materials to build functional devices requires effective and accurate control of the carrier polarity, concentration and spatial distribution in the atomically thin structures. Here, a non-volatile opto-electrical doping approach is demonstrated, which enables reversibly writing spatially resolved doping patterns in the MoTe(2)conductance channel through a MoTe2/hexagonal boron nitride (h-BN) heterostructure. Based on the doping effect induced by the combination of electrostatic modulation and ultraviolet light illumination, a 3-bit flash memory and various homojunctions on the same MoTe2/BN heterostructure are successfully developed. The flash memory achieved 8 well distinguished memory states with a maximum on/off ratio over 10(4). Each state showed negligible decay during the retention time of 2,400 s. The heterostructure also allowed the formation of p-p, n-n, p-n, and n-p homojunctions and the free transition among these states. The MoTe(2)p-n homojunction with a rectification ratio of 10(3)exhibited excellent photodetection and photovoltaic performance. Having the memory device and p-n junction built on the same structure makes it possible to bring memory and computational circuit on the same chip, one step further to realize near-memory computing.

Polarization‐Resolved Broadband MoS 2 /Black Phosphorus/MoS 2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio

Polarization‐Resolved Broadband MoS2/Black Phosphorus/MoS2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio

Realizing the Switching of Optoelectronic Memory and Ultrafast Detector in Functionalized‐Black Phosphorus/MoS2 Heterojunction

Two-dimensional Multibit Optoelectronic Memory with Broadband Spectrum Distinction.

Investigation of Non-Volatile and Photoelectric Storage Characteristics for MoS2/h-BN/graphene Heterojunction Floating-Gate Transistor with the Different Tunneling Layer Thicknesses

Fast, multi‐bit and Vis‐Infrared Broadband Nonvolatile Optoelectronic Memory with MoS2/2D‐perovskite van der Waals Heterojunction

Nonvolatile Infrared Memory in MoS2/PbS Van Der Waals Heterostructures

A Low-Power Optoelectronic Memory Device Based on MoS 2 /bn/graphene Heterostructure

Mechanoplastic Tribotronic Two-Dimensional Multibit Nonvolatile Optoelectronic Memory

Reconfigurable Optical Memory Based on MoS2/QDs Mixed-Dimensional Van Der Waals Heterostructure

Optoelectronic memory in 2D MoS2 field effect transistor

Reconfigurable optical memory based on MoS 2 /QDs mixed-dimensional van der Waals heterostructure

Non-volatile Programmable Homogeneous Lateral MoTe2 Junction for Multi-Bit Flash Memory and High-Performance Optoelectronics

High-Performance Photoinduced Memory with Ultrafast Charge Transfer Based on MoS2/SWCNTs Network Van Der Waals Heterostructure

Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-Mos2 Heterostructures

2D Heterostructures Induced Charge Transfer and Trapping for Hybrid Optically and Electrically Controllable Nonvolatile Memory

Photoinduced Multi-Bit Nonvolatile Memory Based on a Van Der Waals Heterostructure with a 2D-Perovskite Floating Gate.

Photovoltage Junction Memtransistor for Optoelectronic In-memory Computing

Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor

Tunable Nonvolatile Memory Behaviors of PCBM-MoS2 2D Nanocomposites Through Surface Deposition Ratio Control

Borophene-ZnO heterostructures: Preparation and application as broadband photonic nonvolatile memory