Abstract:A floating gate device (FGD) based on ReS2/h‐BN/graphene heterostructure is developed and its photoelectrical hybrid memory and neuromorphic simulation are studied. Benefiting from the outstanding photoelectrical response of ReS2, the excellent nonvolatile memory and higher recognition accuracy of artificial neural network constructed by this FGD indicate that FGD based on ReS2 channel has a great potential in sense–memory‐computation integration chips. The floating gate devices, as a kind of nonvolatile memory, obtain great application potential in logic‐in‐memory chips. The 2D materials have been greatly studied due to atomically flat surfaces, higher carrier mobility, and excellent photoelectrical response. The 2D ReS2 flake is an excellent candidate for channel materials due to thickness‐independent direct bandgap and outstanding optoelectronic response. In this paper, the floating gate devices are prepared with the ReS2/h‐BN/Gr heterojunction. It obtains superior nonvolatile electrical memory characteristics, including a higher memory window ratio (81.82%), tiny writing/erasing voltage (±8 V/2 ms), long retention (>1000 s), and stable endurance (>1000 times) as well as multiple memory states. Meanwhile, electrical writing and optical erasing are achieved by applying electrical and optical pulses, and multilevel storage can easily be achieved by regulating light pulse parameters. Finally, due to the ideal long‐time potentiation/depression synaptic weights regulated by light pulses and electrical pulses, the convolutional neural network (CNN) constructed by ReS2/h‐BN/Gr floating gate devices can achieve image recognition with an accuracy of up to 98.15% for MNIST dataset and 91.24% for Fashion‐MNIST dataset. The research work adds a powerful option for 2D materials floating gate devices to apply to logic‐in‐memory chips and neuromorphic computing.

Investigation of Non-Volatile and Photoelectric Storage Characteristics for MoS2/h-BN/graphene Heterojunction Floating-Gate Transistor with the Different Tunneling Layer Thicknesses

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS 2 Channels

Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS2 /H-Bn/graphene Heterostructure.

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2-BN-Graphene Van Der Waals Heterostructures.

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS 2 –BN–Graphene van der Waals Heterostructures

Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS 2 /h‐BN/Graphene Heterostructure

Tunable non-volatile memories based on 2D InSe/ h-BN/GaSe heterostructures towards potential multifunctionality

2D Heterostructures Induced Charge Transfer and Trapping for Hybrid Optically and Electrically Controllable Nonvolatile Memory

Memtransistor-like operation of devices made by graphene/h-BN/MoS2 van der Waals heterostructure

Multifunctional tunneling devices based on graphene/h-BN/MoSe2 van der Waals heterostructures

Optoelectronic memory in 2D MoS2 field effect transistor

Flash memory based on MoTe2/boron nitride/graphene semi-floating gate heterostructure with non-volatile and dynamically tunable polarity

The Nonvolatile Memory and Neuromorphic Simulation of ReS2/h‐BN/Graphene Floating Gate Devices Under Photoelectrical Hybrid Modulations

Non‐Volatile and Gate‐Controlled Multistate Photovoltaic Response in WSe2/h‐BN/Graphene Semi‐Floating Gate Field‐Effect Transistors

Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-Mos2 Heterostructures

Nonvolatile Memory Devices Based on Two-Dimensional WSe2/MoS2 Van Der Waals Heterostructure

Low-voltage Ultrafast Nonvolatile Memory Via Direct Charge Injection Through a Threshold Resistive-Switching Layer

Multifunctional MoS2 Transistors with Electrolyte Gel Gating.

Low Sub-Threshold Swing Realization with Contacts of Graphene/h-Bn/mos2 Heterostructures in MoS2 Transistors

A Low-Power Optoelectronic Memory Device Based on MoS 2 /bn/graphene Heterostructure

Polarization‐Resolved Broadband MoS 2 /Black Phosphorus/MoS 2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio