Abstract:We report the use of bilayer graphene as an atomically-smooth contact for nanoscale devices. A two-terminal Bucky ball (C60) based molecular memory is fabricated with bilayer graphene as a contact on the polycrystalline nickel electrode. Graphene provides an atomically-smooth covering over an otherwise rough metal surface. The use of graphene additionally prohibits the electromigration of nickel atoms into the C60 layer. The devices exhibit a low-resistance state in the first sweep cycle and irreversibly switch to a high resistance state at 0.8-1.2 V bias. The reverse sweep has a hysteresis behavior as well. In the subsequent cycles, the devices retain the high-resistance state, thus making it write-once read-many memory (WORM). The ratio of current in low-resistance to high-resistance state is lying in 20-40 range for various devices with excellent retention characteristics. Control sample without the bilayer graphene shows random hysteresis and switching.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: in nano - scale devices, how to provide an atomically smooth and reliable contact material to improve the stability and reliability of molecular memories. Specifically, the authors explored the use of bilayer graphene (BLG) as an atomically smooth contact material to prevent atomic migration (electromigration) between nickel electrodes and C60 molecular layers, thereby improving the performance of two - terminal molecular memories based on C60 molecules. ### Main problems and solutions 1. **Contact problems in nano - scale devices**: - In nano - scale devices, traditional metal contacts can lead to unstable device performance due to problems such as atomic roughness, grain boundaries, and electromigration. - To solve these problems, the authors proposed using bilayer graphene as a contact material because it has an atomically smooth surface and can effectively prevent nickel atoms from migrating into the C60 molecular layer. 2. **Performance improvement of molecular memories**: - After using bilayer graphene, the device exhibits stable low - resistance and high - resistance state switching behaviors, and maintains a high - resistance state in subsequent cycles, showing Write - Once Read - Many (WORM) memory characteristics. - Compared with the control samples without bilayer graphene, the devices using BLG exhibit more stable current characteristics and better durability. ### Key experimental results - **First scanning cycle**: The device switches from a low - resistance state to a high - resistance state, with a switching voltage of approximately 0.8 - 1.2 V, and exhibits hysteresis during reverse scanning. - **Subsequent scanning cycles**: The device remains in the high - resistance state and no longer switches or exhibits hysteresis. - **Retention characteristics**: The device exhibits good retention characteristics in both high - and low - resistance states, with a duration of up to 10^4 seconds. ### Conclusion By using bilayer graphene as a contact material, the authors have successfully solved the common contact problems in nano - scale devices and significantly improved the reliability and stability of C60 - molecule - based molecular memories. This research provides new ideas and methods for the future development of high - performance nano - electronic devices.

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