Graphene/metal Contacts: Bistable States and Novel Memory Devices.

Xiaomu Wang,Weiguang Xie,Jun Du,Chengliang Wang,Ni Zhao,Jian-Bin Xu
DOI: https://doi.org/10.1002/adma.201104574
IF: 29.4
2012-01-01
Advanced Materials
Abstract:Graphene field-effect transistors (GFETs) with different metal electrodes are fabricated to explore the contact characteristics. The contact resistance and the spatial potential distribution along the graphene/metal interface are investigated. The low-doped graphene/metal contact can be reversibly switched between "ohmic" and "space-charge region limited" states. The observed switching attributes are highly reproducible and stable, which provides a new avenue to produce high-performance graphene memory devices.
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