Abstract:A resistive switching device with controlled formation and evolution of conductive filament possesses great capability of being miniaturized to atomic scale for the construction of high-density memory arrays and even in-memory computing architectures. Although the switching mechanism based on ion migration and electrochemistry has been clarified, precise control of the evolution dynamics is still a challenge that hinders the direct application of the memory devices. In this contribution, we propose an effective scanning probe microscope tip-assisted approach for the performance modulation of oxide-based resistive switching devices. The directional migration of oxygen anions inside the hafnium oxide nanofilm is regulated by using the voltage-biased scanning probe microscope (SPM) tip as a microelectrode, so that a single filament would be formed deliberately inside the switching matrix to greatly improve the stability and reliability of the memory device. The variations of the switching parameters, e.g. programming voltages and ON/OFF resistances, have been reduced by at least 33%. More importantly, the elaborate tuning of the filament dimension also gives rise to single atomic point contact in the resistive switching device, producing at least 16 half-integer multiples of quantized conductance states that can be used for multilevel data storage and high-order neuromorphic computing paradigm.

Transformation of Threshold Volatile Switching to Quantum Point Contact Originated Nonvolatile Switching in Graphene Interface Controlled Memory Devices

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Graphene-based nonvolatile terahertz switch with asymmetric electrodes

Graphene/metal Contacts: Bistable States and Novel Memory Devices.

Graphene-based atomic-scale switches.

Highly Improved Performance in Zr0.5Hf0.5O2 Films Inserted with Graphene Oxide Quantum Dots Layer for Resistive Switching Non-Volatile Memory

High-performance Ta2O5-based Resistive Random-Access Memory with Embedded Graphene Quantum Dots and Pt-Ag Composite Active Layer

Gate-controlled Non-Volatile Graphene-Ferroelectric Memory

Controlled Construction of Atomic Point Contact with 16 Quantized Conductance States in Oxide Resistive Switching Memory

Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Quantum Conductance in Mos2 Quantum Dots-Based Nonvolatile Resistive Memory Device

MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices

Resistive Switching Memories In Mos2 Nanosphere Assemblies

Multilevel Conductance Switching of a Memory Device Induced by Enhanced Intermolecular Charge Transfer

Multilevel Resistive Switching in Planar Graphene/Sio2 Nanogap Structures

Graphene Oxide and Tio2 Nano-Particle Composite Based Nonvolatile Memory

Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface

Interface Engineering Via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory

Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)

Controllable Volatile-to-nonvolatile Memristive Switching in Single-Crystal Lead-Free Double Perovskite with Ultralow Switching Electric Field

Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes