Abstract:As one of potential photoelectric material, zinc oxide attracted a lot of attentions recently. Such as, its wide band gap (3.37 eV) and high excitonic binding energy of 60 meV make ZnO as a good candidate for developing short wavelength optical devices. Furthermore, the p-doping ZnO can be produced and the p-n structure of ZnO can be formed on the silicon substrate, both of characteristics make ZnO to be compatible with Si-based integrated circuits. Hence, ZnO film has wider application in opto-electronic industries.ZnO films can be easily prepared by reactive sputtering. techniques However, the surface state which caused by damages of bulk silicon surface and lattice mismatch impurity which contaminated in fabrication procedure can produce the level of surface state and deep level in heterojunction. Those levels affect the carries a lot.Generally the level formed by defects can reduce illuminant efficiency, producing non-radiation recombined, but deep level can also become efficient illuminant centre using wide band gap materials. So it is deserved to study deeply of the behavior of ZnO/p-Si heterojunction interface state. The high frequency C-V character can be used to measure the charge of space charge region varied with the voltage variation, this effect of capacitance can be described by differential capacitance. The C-V measurement supplied an important way to research the characteristics of heterojunction. With the help of the measuring C-V and I-V character, we can easily obtain the evidence that interface impurity state and defects in ZnO ∶Al/p-Si interface can have largely influence on electricity property of the heterojunction. We also found it was very useful to reduce the interface state (using) annealing procedure. It was clearly to see that the sample annealed in 800 ℃ had the larger illuminant efficiency.Whether annealed or not, the sample grown by RF sputtering technique can form an abrupt heterojunction, but the character of potential was not the same. As a large number of deep level and surface state level were in interfaces, the C-V curve of sample which was not annealed was aberrance and the I-V curve was exponential with reversing bias voltage. In condition of annealing under 800 ℃, we can observe the influence of interface state was eliminated, and improved rectifying characteristic of heterojunction.

Fabrication and Electrical Characterization of P-Cu2o/N-Zno Heterojunction

Microstructure, Wettability and Electrical Properties of N-Zno/zno-sl/p-cu2o Heterojunction

Junction Properties of Nitrogen-Doped Zno Thin Films

Fabrication and Characterization of P-Zno/n-zn0.8cd0.2o/n-zno Heterojunction

Fabrication of transparent p-CuI/n-ZnO heterojunction with excellent ideality factor

Fabrication and Electrical Characterization of Nanocrystalline ZnO/Si Heterojunctions

Preparation of Cu2o/Zno P-N Junction by Thermal Oxidation Method for Solar Cell Application

Electrical Characterization of Zno-Based Homojunctions

Improving the p–type conductivity of Cu2O thin films by Ni doping and their heterojunction with n–ZnO

Electrical Characteristics of CuS/ZnO PN Heterojunction

Influence of crystallinity and copper dopant concentration in Cu:NiO on their heterojunction characteristics with Al:ZnO

Investigating the opto-electronic and photovoltaic properties of Zn-incorporated CuO thin film grown by vapor–liquid–solid (VLS) method

Fabrication and Optical Properties of InP/Cu2O Nanojunctions

Advance in Cu2O-ZnO Solar Cells and Investigation of Cu2O-ZnO Heterojunction Fabricated by Magnetron Sputtering

Electrical and structural properties of heterojunction AZO, NZO and NiO thin films

Contact Characteristics of ZnO :Al/p-Si

P-Cu 2O/n-ZnO nanowires on ITO glass for solar cells

Heterojunction Devices Fabricated from Sprayed n-Type Ga2O3, Combined with Sputtered p-Type NiO and Cu2O

Characterization of thin film ZnO/ZnCdS/CuGaSe2 heterojunctions

Fabrication of piezotronic ZnO p-n homojunction via metal/oxygen defects modulation for efficient photoelectrocatalysis

Fabrication and Properties of Pure-Phase Cu2O Co-Doped with Zinc and Indium