Advance in Cu2O-ZnO Solar Cells and Investigation of Cu2O-ZnO Heterojunction Fabricated by Magnetron Sputtering

YANG Mei-jia,ZHU Li-ping
DOI: https://doi.org/10.3788/fgxb20133402.0202
2013-01-01
Chinese Journal of Luminescence
Abstract:Cu2O-ZnO heterojunction has shown great potential for photovoltaic application due to the low-cost,nontoxicity,abundance and variety of preparation methods.However,the resistivity of the Cu2O film in present ZnO-Cu2O heterojunction solar cell is relatively high,which seems to be the major problem for the low photoelectric conversion efficiency.Cu2O films were prepared using reactive direct current magnetron sputtering.The microstructures and properties were characterized using X-ray diffraction,X-ray photoelectron spectroscopy(XPS) and Hall-effect measurements.The influences of qV(Ar)∶qV(O2) on the structures and properties of deposited films were investigated.Single-phase Cu2O film with a resistivity of 88.5 Ω·cm,a Hall mobility of 16.9 cm2·V-1·s-1 and a carrier concentration of 4.19×1015 cm-3 were obtained at qV(Ar)∶qV(O2)=90∶0.3.The as-deposited Cu2O films have a great improvement in electrical performance and have more advantage in photovoltaic application compared with that prepared by electrochemical deposition or thermal oxidation.On that basis,the Cu2O-ZnO heterojunctions were fabricated in reversed growth sequence and the band alignments of the heterojunctions were given to investigate their potential application in solar cells.Possible areas for future work in this field were outlined and some suggestions were made based on our investigation of the Cu2O-ZnO heterojunctions fabricated by magnetron sputtering.
What problem does this paper attempt to address?