Preparation of Cu2o/Zno P-N Junction by Thermal Oxidation Method for Solar Cell Application

Dongyun Guo,Yang Ju
DOI: https://doi.org/10.1016/j.matpr.2016.01.019
2016-01-01
Materials Today Proceedings
Abstract:The ZnO layer with wurtzite structure was prepared on a tin-doped indium oxide (ITO) glass substrate by the thermal oxidation method. The ZnO nanowires with length of 400 – 600nm were formed. And then the (111)-oriented Cu2O layer with fine grains was grown on the ZnO layer to form the ZnO/Cu2O heterojunction by the thermal oxidation method. Their microstructure and electric properties were investigated.
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