Abstract:The comprehensive investigation of the effect of growth parameters on structural and optical properties of Si-based single layer Ge nanoislands grown via Stranski-Krastanov mechanism employing radio frequency magnetron sputtering due to its high deposition rate, easy procedure, economical cost, and safety is carried out. The estimated width and height of Ge nanoislands produced by this technique are in the range of ∼8 to ∼30 and ∼2 to 8 nm, respectively. Varieties parameters are manipulated to optimize the surface morphology and structural and optical behavior of Ge nanoislands. The resulted nanoislands are analyzed using various analytical techniques including atomic force microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, room temperature photoluminescence, and Raman spectroscopy. The optimum parameters for growing high quality samples having high number density and homogenous and small size distribution are found to be 400°C for substrate temperature, 300 sec for deposition time, 10 sccm for Ar flow, and 100 W for radio frequency power. The excellent features of the results suggest that our systematic investigation on the organized growth factors and their effects on surface parameters and photoluminescence emission energy may constitute a basis for the tunable growth of Ge nanoislands (100) nanoislands suitable in nanophotonics.

Effect of Sputtering Pressure on the Surface Morphology of the Ge/Si Nanodots

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Study of Si and Ge growth on Si(100) surface

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Effect Of Sputtering Pressure On The Structure And Properties Of Sio2 Films Prepared By Magnetron Sputtering

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Pressure-dependent transition from atoms to nanoparticles in magnetron sputtering: Effect on WSi2 film roughness and stress

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Effects of Ambient Pressure on Silicon Nanowire Growth

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Early Stage Growth of Amorphous Thin Film: Average Kinetics, Nanoscale Dynamics and Pressure Dependence

Nanopatterning of Si(110) Surface by Ion Sputtering: an Experimental and Simulation Study

Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

Ge Molecular Beam Epitaxy on Si(113): Surface Structures, Nanowires and Nanodots

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Growth of Ge quantum dots on SiO2/Si(111) surface

Ion-Sputter-Induced Nanodots on Si(110): Ion Energy Dependence