Abstract:The structural evolution and optical characterization of hydrogenated silicon (Si:H) thin films obtained by conventional radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) through decomposition of silane diluted with argon were studied by X-ray diffractometry (XRD), Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and ultraviolet and visible (UV-vis) spectroscopy, respectively. The influence of argon dilution on the optical properties of the thin films was also studied. It is found that argon as dilution gas plays a significant role in the growth of nano-crystal grains and amorphous network in Si:H thin films. The structural evolution of the thin films with different argon dilution ratios is observed and it is suggested that argon plasma leads to the nanocrystallization in the thin films during the deposition process. The nanocrystallization initiating at a relatively low dilution ratio is also observed. With the increase of argon portion in the mixed precursor gases, nano-crystal grains in the thin films evolve regularly. The structural evolution is explained by a proposed model based on the energy exchange between the argon plasma constituted with Ar* and Ar+ radicals and the growth regions of the thin films. It is observed that both the absorption of UV-vis light and the optical gap decrease with the increase of dilution ratio.

Structural Evolution and Optical Characterization in Argon Diluted Si:H Thin Films Obtained by Plasma Enhanced Chemical Vapor Deposition

Deposition of a-Si:H thin films embedded with nano-crystalline through dilution of argon

Properties of plasma-deposited amorphous SiO2 films

Nanocrystallization of a-Si:H thin films deposited by PECVD under low argon dilution

Effects of Low Argon Dilution Ratio on the Nanocrystallization and Properties of A-Si:H Thin Films.

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

Comparative Study of Hydrogen and Argon Dilution Effects in Amorphous SiC Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Evolution of Infrared Spectra and Optical Emission Spectra in Hydrogenated Silicon Thin Films Prepared by VHF-PECVD

Effect of Ar in the Source Gas on the Microstructure and Optoelectronic Properties of Microcrystalline Silicon Films Deposited by Plasma-Enhanced CVD

Influence of RF Power Density on the Nanocrystallization of Ar Diluted Si:H Thin Films Deposited by PECVD

The influence of H2/(H2 + Ar) ratio on microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

Influence of H2 Dilution on the Optical and Electronical Properties of A-Si:H/nc-si:h Films Deposited by RF-PECVD

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Structure and Electronic States in A-Si:H Thin Films

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd