Preparation of Three-Dimensional Silicon Micro-Electrode Structure for Micro-Supercapacitor

WEN Chunming,WEN Zhiyu,YOU Zheng,WANG Xiaofeng,LI Dongling,SHANG Zhengguo
DOI: https://doi.org/10.3969/j.issn.1001-2028.2012.05.012
2012-01-01
Abstract:To increase the surface area of silicon-based micro-supercapacitor electrode structure,improve the charge storage capacity of the electrode,inductively coupled plasma etching(ICP) technology was used to prepare three-dimensional micro-electrode structure of the supercapacitor.The effects of the process parameters of etching and passivation gas flow rate,RF power,electrode voltage on the electrode structure were studied.To obtain satisfactory results,the determination of the process parameters should obey the general laws of the etching and the specific characteristics of the equipment used,and combined with the actual requirements.When the mask width is 25 μm,the specific surface area increase 8.38 times at the same footprint area,and surface topography of the electrode are regular.
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