Abstract:Silicon is a promising substrate for GaN growth due to its low cost, large size and potential applications in the integration of optoelectronic and microelectronic devices. However, a high lattice (~17%) and thermal (~56%) mismatch between Si substrate and GaN epilayer causes large tensile stress and leads to the formation of cracks when the GaN layer thickness is above 1.0 μm during the cooling down to room temperature. Therefore, the growth of high quality and crack-free GaN layers on silicon substrates is still a challenging issue. It has been widely reported that cracking problem can be mitigated by using techniques like low-temperature (LT) AlN interlayers, AlxGa1-xN transition layer, thin SixNy interlayers, AlN/GaN superlattices, etc. In this work, we used the LT-AlN interlayers for strain engineering during the growth of GaN layers by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) on Si(111) substrates. And we investigated the fluence of the thickness of LT-AlN interlayers, which is considered as one of the most important factors in reducing tensile stress and controlling density of micro-cracks in GaN layer. Optical microscopy, atomic force microscopy, X-ray diffraction and Raman spectrum were employed to characterize these samples of GaN epilayers. The results demonstrate that the crystal quality of GaN depends strongly on the thickness of the epilayers, and crack-free GaN layers with thickness exceeding 1.5 μm can be achieved by using LT-AlN interlayers with an optimized thickness.

Interface and Surface Characterization of MOCVD Al_xGa_(1-x)N/GaN Superlattice

X-ray Reflectivity and Atomic Force Microscopy Studies of MOCVD Grown AlxGa1−xN/GaN Superlattice Structures

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

MOCVD Growth of GaAs/Al X Ga 1- X As Superlattices and Their Smoothing Effects

Growth and Characterization of Algan/Gan Superlattices

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD

An X-ray diffraction and Raman spectroscopy investigation of AlGaN epi-layers with high Al composition

Smoothing Effect of GaAs/AlxGa1−xAs Superlattices Grown by Metalorganic Vapor Phase Epitaxy

Smoothing Effects of MOCVD Grown GaAs/AlxGa1-xAs Superlattices

Surface Chemical and Local Electronic Properties of Al_xGa_1-xN Epi-Layers Grown by MOCVD

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

Structural Characterization of Al0.55ga0.45n Epitaxial Layer Determined by High Resolution X-Ray Diffraction and Transmission Electron Microscopy

Structural characteristic of cubic GaN nucleation layers on GaAs(0 0 1) substrates by MOCVD

Structural and Optical Analyses of AlxGa1−xN Thin Films Grown by Metal Organic Chemical Vapor Deposition

X-ray Characterization of Composition and Relaxation of AlxGa1−xN(≤x≤1) Layers Grown on GaN/sapphire Templates by Low Pressure Organometallic Vapor Phase Epitaxy

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Effects of the thickness of low-temperature AlN interlayers on GaN layers grown on Si(111) substrates by MOCVD

Structural Characterization of Algan/Gan Superlattices by X-Ray Diffraction and Rutherford Backscattering