Abstract:AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0 mu m GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN( 002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density I-dss of 737mA/mm, peak transconductance G(m) of 185 mS/mm, drain leakage current density I-ds of 1.7 mu A/mm, gate leakage current density I-gs of 24.8 mu A/mm and off-state breakdown voltage V-BR of 67V are achieved with L-g/W-g/L-gs/L-gd = 1/10/1/1 mu m. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency f(T) of 8.3 GHz and power gain cutoff frequency f(max) of 19.9 GHz are achieved with L-g/W-g/L-gs/L-gd = 1/100/1/1 mu m. Furthermore, the best rf performance with f(T) of 14.5 GHz and f(max) of 37.3 GHz is achieved with a reduced gate length of 0.7 mu m.

Smoothing Effects of MOCVD Grown GaAs/AlxGa1-xAs Superlattices

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Structural and Optical Characteristics of Al X Ga 1- X N/AlN Superlattice

Improvement of the oxidation interface in an AlGaAs/AlxO y waveguide structure by using a GaAs/AlAs superlattice

Improvement of the Oxidation Interface in an AlGaAs/AlxOy Waveguide Structure by Using a GaAs/AlAs Superlattice

Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Effect of Algan Intermediate Layer on Residual Stress Control and Surface Morphology of Gan Grown on 6H-Sic Substrate by Metal Organic Vapour Phase Epitaxy

Investigation on the Quantum-Well Structure of A Gaas/Al0.3ga0.7as Superlattice Grown on A Misoriented Substrate

TEM Analysis on GaN/AlGaN SLS

Laser Recrystallization of MOCVD Poly-GaAs on Insulating Substrates

Study on strain relaxation in AlGaN/GaN superlattices grown by metal-organic chemical vapor deposition

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

Effect of Growth Condition on Electrical-Properties of Mbe and Mocvd-Alinas

Effect of Si and Zn Doping on Surface Defects in AlGaInAs Compositionally Graded Buffer by MOCVD

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD