20-P-11 Pure-silica Zeolite Low-K Dielectric Thin Films by Spin-on Process

Zhengbao Wang,H. Wang,A. Mitra,L. Huang,Y. Yan
DOI: https://doi.org/10.1016/s0167-2991(01)81650-5
2001-01-01
Abstract:Publisher Summary This chapter discusses pure-silica zeolite low-k dielectric thin films by spin-on process. Spin-on silicalite thin films are prepared from silicalite nanocrystals. Spin-on silicalite films with high porosity have a dielectric constant (k) of 1.8–2.2. A secondary growth of nanocrystals is carried out on spin-on films under microwave treatment. A secondary growth of nanocrystals by microwave treatment could increase the mechanical strength and control the interparticle pore size and porosity of spin-on silicalite films. Microwave-treated spin-on films have a k value of 2.2–2.4. The effect of moisture on k value is also studied. The silylation of silicalite films with chlorotrimethylsilane is conducted to eliminate the effect of moisture on the dielectric constant. Stable k values are obtained after silylation.
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