An ultralow-k dielectric derived from a fluorinated polybenzoxazole composite film with yolk–multishell mesoporous silica nanostructures
Zhe Zhang,Peng He,Wenjun Ma,Peiyuan Zuo,Xiaoyun Liu,Qixin Zhuang
DOI: https://doi.org/10.1039/d3tc00265a
IF: 6.4
2023-04-28
Journal of Materials Chemistry C
Abstract:In order to solve the problem of signal delay and crosstalk caused by the miniaturization of VLSI circuits, it is urgently required to further reduce the dielectric constant ( k ) of materials. To date, porous low-dielectric materials still have shortcomings such as difficulty in controlling the pore volume and large fluctuation of k over a wide temperature range. Herein, a novel and controllable selective etching strategy to fabricate yolk–multishell mesoporous silica nanoparticles (YS-CSSs@3S-mSiO 2 ) is reported. This strategy allows precise control of the number of spherical shell layers, diameter, cavity size, mesoporous structure and core size, coupled with the closed-pore silica spheres (CSSs) as the core so that the obtained YS-CSSs@3S-mSiO 2 nanoparticles have a high pore volume (0.95 cm 3 g −1 ), low specific surface area (144 m 2 g −1 ), uniform diameter and excellent monodispersity. We found that the corresponding 8 wt%-YS-CSSs@3S-mSiO 2 /fluorinated polybenzoxazole (6FPBO) composite film possesses an ultralow dielectric constant ( k = 1.87) that is very competitive among the low- k materials reported. Moreover, the nanocomposite films maintain great stability with almost unchanged k values over a wide temperature range up to 200 °C. The 5% weight loss temperature of nanocomposites reaches a maximum value of 540 °C. Accordingly, our current work provides a promising candidate for ultralow- k materials and lays a solid foundation for advanced material applications in the 5G communication and semiconductor field.
materials science, multidisciplinary,physics, applied