Abstract:The development of high-performance integrated circuit chips and the shrinkage of feature sizes according to Moore’s law bring forward continuously the requirements for low dielectric constant (low-k) materials with various excellent properties in the back-end-of-the-line (BEOL) interconnect. Porous SiCOH films prepared by plasma enhanced chemical vapor deposition (PECVD) through a porogen approach are widely applied to industry and extensively studied. Thermal annealing is an important process for fabricating the porous low-k films, which has a great influence on film structure as well as properties. SiCOH films are deposited by PECVD using tetraethoxysilane and limonene as precursors, and annealed at 450 ℃ for 1.5 h under nitrogen atmosphere. The evolutions of film structure and properties during thermal annealing are revealed, and the reaction mechanism for structure change is also proposed. Fourier transform inferred spectroscopy and solid state nuclear magnetic resonance results show that the as-deposited film is an organic-inorganic hybrid film composed of various kinds of Si-O-Si, -CHx, Si-O-CH2CH3, etc. The organic component is removed almost completely during thermal annealing, making a porous film with a Si-O-Si inorganic skeleton. The skeleton is also rearranged at the same time. Deconvolution of the Si-O-Si absorption band of the FTIR spectrum reveals that the cage-like Si-O-Si occupies the major part for both as-deposited and annealed films, while the amount of silicon suboxide Si-O-Si decreases and that of network Si-O-Si increases during thermal annealing, making the film more robust. More C=C and Si-C are formed through chemical reactions between Si-H, -CHx and Si-O-CH2-CH3, and crosslinking is further enhanced. Nitrogen adsorption/desorption isothermal measurement reveals that a large number of micropores with diameter less than 2-3 nm are created during thermal annealing, which is consistent with the removal of organic groups and the existence of cage-like Si-O-Si. As a result, both the refractive index and dielectric constant decrease significantly from 1.476 (λ =630 nm) and 3.45 to 1.365 and 2.60, respectively. Because of the increase of C=C after annealing, extinction coefficient and leakage current density increase. Although there is a shrinkage of 14.7% in film thickness and a reduction of mechanical properties after annealing, the Young’s modulus is still larger than 4 GPa. Considering all kinds of properties, the obtained film appears to be a competitive candidate as inter layer dielectrics in the BEOL interconnect of integrated circuits.

Preparation and Characterization of Ultralow-Dielectric-Constant Porous SiCOH Thin Films Using 1,2-Bis(triethoxysilyl)ethane, Triethoxymethylsilane, and a Copolymer Template

Preparation Of Low-K Nanoporous Sio2 Films By Plasma-Enhanced Chemical Vapor Deposition

Characterization of ultra-low k porous organosilica thin films

Preparation of Ultra Low-κ Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition

Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen

Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

Mechanical Properties of Low K SiO2 Thin Films Templated by PVA

Plasma enhanced chemical vapor deposition ultralow dielectric constant films using triethoxymethylsilane and limonene as precursors

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Temperature-mediated Structural Evolution of Vapor–phase Deposited Cyclosiloxane Polymer Thin Films for Enhanced Mechanical Properties and Thermal Conductivity

Preparation and Characterization of SiCOH Film Using a New Precursor Trimethoxy [2-(Oxabicyclo [4.1.0] Hept-3Yl) Ethyl] Silicane

Effect of Thermal Annealing on the Structure and Properties of Plasma Enhanced Chemical Vapor Deposited Sicoh Film

Thermal Stability of Ultralow k Carbon-Bridged Periodic Mesoporous Organosilica Film

Low dielectric constant films deposited by PECVD using tetraethoxysilane and limonene as precursors

Pure Silica Zeolite Films as Low-k Dielectrics by Spin-On of Nanoparticle Suspensions

20-P-11 Pure-silica Zeolite Low-K Dielectric Thin Films by Spin-on Process

Effect of O2-doping on Bonding Configuration and Electric Properties of SiCOH Films Prepared by Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma

Mechanical Properties and Interface Characteristics of Nanoporous Low-K Materials.

Fluorine‐Free Nanoporous Low‐k Dielectric Film Covalently Grafted on Si Via Aryldiazonium Chemistry

Ultra-Low-K Thin Films of Polyhedral Oligomeric Silsesquioxane/Epoxy Nanocomposites Via Covalent Layer-By-Layer Assembly

An amorphous SiCOF film with low dielectric constant prepared by plasma-enhanced chemical vapor deposition