Abstract:Low-k SiONC thin films with excellent thermal stabilities were deposited using plasma-assisted molecular layer deposition (PA-MLD) with a tetraisocyanatesilane (Si(NCO)4) precursor, N2plasma, and phloroglucinol (C6H3(OH)3). By adjusting the order of the N2plasma exposure steps within the PA-MLD process, we successfully developed a deposition technique that allows accurate control of thickness at the Ångström level via self-limiting reactions. The thicknesses of the thin films were measured through spectroscopic ellipsometry (SE). By tuning the N2plasma power, we facilitated the formation of -NH2sites for phloroglucinol adsorption, achieving a growth per cycle of 0.18 Å cycle-1with 300 W of N2plasma power. Consequently, the thickness of the films increased linearly with each additional cycle. Moreover, the organic linkers within the film formed stable bonds through surface reactions, resulting in a negligible decrease in thickness of approximately -11% even upon exposure to a high annealing temperature of 600 °C. This observation was confirmed by SE, distinguishing the as-prepared film from previously reported low-k films that fail to maintain their thickness under similar conditions. X-ray photoelectron spectroscopy (XPS) and current-voltage (I-V) and capacitance-voltage (C-V) measurement were conducted to evaluate the composition, insulating properties, and dielectric constant according to the deposition and annealing conditions. XPS results revealed that as the plasma power increased from 200 to 300 W, the C/Si ratio increased from 0.37 to 0.67, decreasing the dielectric constant from 3.46 to 3.12. Furthermore, there was no significant difference in the composition before and after annealing, and the hysteresis decreased from 0.58 to 0.19 V owing to defect healing, while maintaining the leakage current density, breakdown field, and dielectric constant. The low dielectric constant, accurate thickness control, and excellent thermal stability of this MLD SiONC thin film enable its application as an interlayer dielectric in back-end-of-line process.

Preparation of Ultra Low-κ Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition

Preparation Of Low-K Nanoporous Sio2 Films By Plasma-Enhanced Chemical Vapor Deposition

Preparation and Characterization of Ultralow-Dielectric-Constant Porous SiCOH Thin Films Using 1,2-Bis(triethoxysilyl)ethane, Triethoxymethylsilane, and a Copolymer Template

Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen

Characterization of ultra-low k porous organosilica thin films

Pure Silica Zeolite Films as Low-k Dielectrics by Spin-On of Nanoparticle Suspensions

Ultrahydrophobicity Of Polydimethylsiloxanes-Based Multilayered Thin Films

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

20-P-11 Pure-silica Zeolite Low-K Dielectric Thin Films by Spin-on Process

Plasma enhanced chemical vapor deposition ultralow dielectric constant films using triethoxymethylsilane and limonene as precursors

Ultra-Low-K Thin Films of Polyhedral Oligomeric Silsesquioxane/Epoxy Nanocomposites Via Covalent Layer-By-Layer Assembly

Low dielectric constant films deposited by PECVD using tetraethoxysilane and limonene as precursors

Tween-80 based ultra low-k (ULK) mesoporous films

Preparation and Properties of Ultra Low K Porous Silica Films Modified by Trimethylchlorosilane (TMCS)

Mechanical Properties and Interface Characteristics of Nanoporous Low-K Materials.

Thermal Stability of Ultralow k Carbon-Bridged Periodic Mesoporous Organosilica Film

New Approach for the Preparation of Nanoporous Polyorganosilicate Low-K Films

Synthesis of low-k SiONC thin films by plasma-assisted molecular layer deposition with tetraisocyanatesilane and phloroglucinol

Polyhedral Oligomeric Silsequioxane Monolayer As A Nanoporous Interlayer for Preparation of Low-K Dielectric Films

Exploring the Relationship Between Electrical Characteristics and Changes in Chemical Composition and Structure of OSG Low-K Films Under Thermal Annealing

Controllable Preparation Of Ultra-Low-Dielectric Nanoporous Silica Via Inorganic-Organic Hybrid Templates