Abstract:In this brief, a novel superjunction (SJ)-insulated-gatebipolar transistor (SJ-IGBT) is proposed and investigated by simulation, where a floating N-base region on the P-pillar region is introduced to form a self-biased PMOS. In the on-state, the PMOS can increase the hole quasi-Fermi potential of the P-pillar region, enhancing the carrier-storage effect in the N-pillar and P-pillar regions and reducing the on-state voltage consequently. In the turn-off transient, because the PMOS can be automatically turned on as a consequence of the potential rise of the P-pillar region with hole accumulation, the proposed SJ-IGBT can be rapidly turned off. The results from TCAD simulation reveal that the on-state voltage of the proposed SJ-IGBT is 46.7% lower than that of the conventional SJ-IGBT with P-pillar shorted with cathode (SJ-IGBT-A) and nearly equivalent to that of the conventional SJ-IGBT with gate on the P-pillar (SJ-IGBT-B). In addition, the off-state breakdown voltage of the proposed SJ-IGBT can roughly keep an identical value with that of SJ-IGBT-A and is 25% higher than that of SJ-IGBT-B. In addition, with the same VON of 1.16 V, the turn-off energy loss of the proposed device is 1.2 mJ/cm(2), which is 94.7% lower than that of SJ-IGBT-A and 20% lower than that of SJ-IGBT-B.

Theoretical and Experimental Analyses of Safe Operating Area (soa) of 1200-V 4H-Sic Bjt

Analysis Of Sicbjt Rbsoa

Rbsoa Study Of High Voltage Sic Bipolar Devices

4H-Sic BJT Characterization at High Current High Voltage

Comparison of Static and Switching Characteristics of 1200 V 4H-Sic BJT and 1200 V Si-IGBT

Analysis of Operational Degradation of SIC BJT Characteristics

Simulation Study of a Low ON-State Voltage Superjunction IGBT with Self-Biased PMOS

Study on Mechanisms of Ingap/Gaas Hbt Safe Operating Area Using Tcad Simulation

Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT

An Experimental And Numerical Investigation Of Igbt Blocking Characteristics

Lateral IGBT in thin SOI process for high voltage ESD application

Characterization of 1.2 Kv SiC Super-Junction SBD Implemented by Trench and Implantation Technique

Investigation of safe operating area and behavior of unclamped inductive switching on 4H-SiC VDMOSFET

Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS

3kV 6.7mΩ·cm<sup>2</sup> 4H-SiC BJT with An Effective Junction Termination Extension (JTE)

Design and Simulation of 600V 4H-Sic Superjunction JBS Diode

Electrothermal Model of SiC Power BJT

3kV 6.7mΩ·cm2 4H-SiC BJT with An Effective Junction Termination Extension (JTE)

Modeling of a 1200 V 6 a SiC bipolar junction transistor

Surface-Passivation Effects on the Performance of 4H-Sic BJTs

Static and dynamic characterization of silicon carbide bipolar junction transistor