Abstract:In this paper, the operation mechanism of trench termination is investigated through 2-D numeric simulation on Silvaco. It is found that in trench termination, the electric field is terminated by the accumulated holes at the outer trench sidewall. In order to ensure a high termination breakdown voltage, the trench is refilled with a combination of SiO<sub>2</sub> and polyimide (PI). Through various 2-D numerical simulations, the impact of structural parameters on breakdown voltage has been discussed, namely, trench depth (TD), trench width (TW), and sidewall tilt angle. The 3-D simulations are also conducted to investigate the effect of round corner radius on the device breakdown voltage and electric field in the dielectrics. Based on these results, the trench termination is designed and then fabricated along with a p-i-n diode. The measurement results show that a $14~mu text{m}$ wide trench is sufficient to terminate a voltage of 1750V (>96% of the ideal planar breakdown). Comparing with conventional field limiting rings junction termination extension (FLR/JTE) technology, this trench termination can significantly reduce the termination length by a factor of 4. As a result, the area efficiency is largely improved from 62% to around 90% for a 2A device conducting at 1000 A/cm<sup>2</sup>. These results indicate that the SiC device price can be substantially lowered with such an area-efficient trench termination technology. Furthermore, the 168-h high-temperature reverse bias (HTRB) test under 1200 V and 175 °C shows the potential of this trench termination for long-term reliable operation. Finally, unclamped inductive switching (UIS) tests have been conducted on fabricated devices. Compared to commercial SiC junction barrier Schottky diodes with FLR, fabricated p-i-n diodes with trench termination -how significant higher avalanche capability.

3kV 6.7mΩ·cm<sup>2</sup> 4H-SiC BJT with An Effective Junction Termination Extension (JTE)

3kV 6.7mΩ·cm2 4H-SiC BJT with An Effective Junction Termination Extension (JTE)

5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

Research on an Improved Junction Termination Structure for 4H-SiC BJTs

1836 V, 4.7 mΩ•cm<sup>2</sup> High Power 4H-SiC Bipolar Junction Transistor

4H-Sic BJTs with Epitaxial Junction Termination Composite Structure

1836 V, 4.7 Mω•cm2 High Power 4H-Sic Bipolar Junction Transistor

A Novel 4H-Sic Lateral Bipolar Junction Transistor Structure with High Voltage and High Current Gain

High Power 4 H-SiC Bipolar Junction Transistor

Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain

Improved Etched Multistep JTE for UHV SiC Power Devices

Implantation-free SiC Thyristor with Single-Mask 3D Termination Near 10 Kv

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

4.15 Kv / 4.6 Mω·cm2 4H-Sic Epi-refilled Super-Junction Schottky Diode with Ring Assisted Super-Junction Termination Extension

Silicon Carbide Bipolar Junction Transistor with Novel Emitter Field Plate Design for High Current Gain and Reliability

High Current Gain 4H-Sic Bipolar Junction Transistor

4H-Sic BJT Characterization at High Current High Voltage

Design and Fabrication of 1.92 Kv 4H-Sic Super-Junction SBD with Wide-Trench Termination

An Improved Composite JTE Termination Technique for Ultrahigh Voltage 4H-Sic Power Devices

A High Performance 4H-Sic Normally-off VJFET

Characterization and Fabrication of the CFM-JTE for 4H-Sic Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window