Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

Comparison of Static and Switching Characteristics of 1200 V 4H-Sic BJT and 1200 V Si-IGBT

4H-Sic BJT Characterization at High Current High Voltage

High Temperature Characterization of Sicbjts for Power Switching Applications

Theoretical and Experimental Analyses of Safe Operating Area (soa) of 1200-V 4H-Sic Bjt

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

An Experimental And Numerical Investigation Of Igbt Blocking Characteristics

Performance comparison of 1200V 100A SiC MOSFET and 1200V 100A silicon IGBT

Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT

Comparison of 1700-V SiC-MOSFET and Si-IGBT Modules Under Identical Test Setup Conditions

Analysis Of Sicbjt Rbsoa

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Design and Characterization of High-Voltage 4H-Sic P-Igbts

Modeling of a 1200 V 6 a SiC bipolar junction transistor

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Comparisons of 6.5kv 25A Si IGBT and 10-Kv SiC MOSFET in Solid-State Transformer Application

Low Ron,sp.diff and Ultra-high Voltage 4H-Sic N-Channel IGBTs with Carrier Lifetime Enhancement Process

Integration of 1200v Sicbjt with Sic Diode

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Comparison and Analysis of Short Circuit Performance of 1200V SiC MOSFETs

Static and dynamic characterization of silicon carbide bipolar junction transistor