Abstract:Although the body diode of SiC MOSFET has excellent surge capability, the reliability issues about commercial SiC MOSFET under repetitive surge current stress of body diode haven't been studied thoroughly. In this work, repetitive surge current stress is applied to the body diode of commercial SiC trench MOSFET, and the surge tests are conducted under different gate biases and ambient temperatures. It is found that no bipolar degradation occurs in the body diode but degradation phenomena of gate oxide and package are observed in devices under tests (DUTs). At room temperature, the threshold voltage (VT8) related to gate oxide degradation degrades more seriously at a negative gate bias of -5V than at 0V. At 0V gate bias, gate oxide and package degenerate more severely at /25°C than at 25°C. The evolution of on-state resistance (R DSON ) during the tests is influenced by the competitive mechanism between gate oxide degradation and package degradation. As a result, gate oxide degradation causes R DSON to reduce while package degradation makes R DSON rise. Meanwhile, the competitive mechanism is deeply influenced by the gate bias voltage and ambient temperature. The failure analysis shows that all DUTs fail with gate and source terminal shorted, which is mainly attributed to high junction temperature.

Investigation of safe operating area and behavior of unclamped inductive switching on 4H-SiC VDMOSFET

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Failure Mechanisms Of Soi High-Voltage Ligbts And Ldmoses Under Unclamped Inductive Switching

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Effect of Termination Region on Unclamped Inductive Switching Failure for 4H-Sic VDMOS

Impact of Negative Gate Bias and Inductive Load on the Single-Pulse Avalanche Capability of 1200-V SiC Trench MOSFETs

Impact of SiC power MOSFET interface trap charges on UIS reliability under single pulse

Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-Kv SiC JBS-Integrated MOSFETs

An In-Depth Investigation into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs

Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions

Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs

Experimental Investigation on Failure Mechanism of SiC Power MOSFETs under Single Pulse Avalanche Stress

Characterization of Electro-Thermal Coupling Behaviors and Safe Operating Area of SiC MOSFET Modules in Pulsed Power Applications

Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET

Investigation of Maximum Junction Temperature for 4h‐sic MOSFET During Unclamped Inductive Switching Test

Investigation of Inrush Current Induced Trench Gate Degradation inside SiC MOSFET by New Fowler- Nordheim Localization Methodology

Experimental Investigation of the Single Pulse Avalanche Ruggedness of SiC Power MOSFETs

Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS