Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

Fabrication of SGOI Material by Oxidation of an Epitaxial SiGe Layer on an SOI Wafer with H Ions Implantation

Mechanism in SiGe-on-Insulator Fabricated by Modified Ge-Condensation Technique

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Growth of Ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

Fabrication and Mechanism of Relaxed Sige-On-Insulator by Modified Ge Condensation

Goi Improvement in 65nm Sacrificial Oxide Free Process Integration

Synthesis of SOI Material Using Low Energy Water Ion Implantation

Ge-on-insulator fabrication based on Ge-on-nothing technology

Interfacial Characteristics of Fully Depleted Sige-On-Insulator (sgoi) Substrate Fabricated by Modified Ge Condensation

Characterization of Ultrathin-Body Germanium-on-insulator (geoi) Structures and MOSFETs on Flipped Smart-Cut™ GeOI Substrates

Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics

Fabrication of a Novel SOI Material with Non-Planar Buried Oxide Layer

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

Progress in the Research and Development of SGOI Virtual Substrate: A New Si-Based Microelectronic Material

Fabrication of Flexible Amorphous InGaZnO Thin Film Transistors with SiOx/TaOx Gate Insulators

Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs

Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method

The Study on SiO2 Pattern Fabrication Using Ge1.5Sn0.5Sb2Te5 As Resists