Abstract:Ge gate stacks by exposing oxygen plasma to ALD Al2O3/Ge were proposed.GeOx formed between Al2O3 and Ge significantly reduces interface state density.High electron mobility of 690cm2/Vs in Ge nMOSFETs with EOT of 0.7-0.8nm.High hole mobility of 546cm2/Vs in Ge p-MOSFETs with EOT of 0.7-0.8nm. CMOS utilizing high mobility Ge channels on Si substrates is expected to be one of promising devices for high performance and low power advanced LSIs. Here, one of the most critical issues in Ge MOSFETs is the realization of gates stacks with superior MOS interfaces. We have proposed novel Ge gate stack technology using ultrathin Ge oxide interfacial layers (ILs). The Ge ILs are formed by exposing ECR oxygen plasma to thin Al2O3 on Ge substrates, which is called plasma post oxidation. Here, Al2O3 serves as a sufficient oxygen barrier that suppresses the growth of unnecessarily-thick GeOx IL, thanks to its intrinsic oxygen permeability. The relationship between the GeOx thickness and interface state density (Dit) is evaluated. Also, in order to further reduce EOT, we have introduced a revised version of gate stack formation using HfO2/Al2O3 stacks. The role of ultrathin Al2O3 films on the properties of the gate stacks is studied. As a result, HfO2/Al2O3/GeOx/Ge gate stacks having EOT of 0.72nm as the thinnest value have been realized with the excellent interface quality. High electron mobility of 754 and 690cm2/Vs and hole mobility of 596 and 546cm2/Vs have been obtained in EOT of 0.82 and 0.76nm, respectively.

Interfacial Characteristics of Fully Depleted Sige-On-Insulator (sgoi) Substrate Fabricated by Modified Ge Condensation

Mechanism in SiGe-on-Insulator Fabricated by Modified Ge-Condensation Technique

Fabrication and Mechanism of Relaxed Sige-On-Insulator by Modified Ge Condensation

Interfacial and Electrical Characteristics of Al2O3 Gate Dielectric on Fully Depleted SiGe on Insulator

Demonstration of Ultra-Thin Buried Oxide Germanium-on-insulator MOSFETs by Direct Wafer Bonding and Polishing Techniques

High Performance SiGe Body-On-Insulator (BOI) FinFET Fabricated on Bulk Si Substrate Using Ge Condensation Technique

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Ge-on-insulator fabrication based on Ge-on-nothing technology

Characterization of Ultrathin-Body Germanium-on-insulator (geoi) Structures and MOSFETs on Flipped Smart-Cut™ GeOI Substrates

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Impact of Back Interface Passivation on Electrical Properties of Ultrathin-Body Germanium-On-Insulator (geoi) Mosfets

Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method

Goi Improvement in 65nm Sacrificial Oxide Free Process Integration

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Growth of Ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI

Thermal Annealing Effects on the Structure and Electrical Properties of Al2O3 Gate Dielectrics on Fully Depleted SiGe on Insulator

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Characteristics of Native Oxides-Interfaced GaAs/Ge np Diodes