Abstract:The study of thin-film nanocomposites, including crystalline and amorphous silicon nanoparticles embedded in silicon oxide layers, is a key direction in the field of materials for optoelectronics. This study explored the interest in such composites, including erbium silicide (ErSi2-x), in the context of their applications in non-volatile memory and photovoltaic devices. Particular attention was paid to the structure and properties of such materials, including the analysis of defects in erbium-doped silicon. The results of the study, based on Raman spectroscopy and X-ray phase analysis, made it possible to identify the characteristics of the composition and structure of the studied samples. The identified data confirmed the presence of crystalline phases of Si and Er in the p-Si-Er composite, and also showed the substitution of Er in the p-Si/SiO2 structure. Additionally, X-ray microanalysis data confirmed the presence of Si, O and Er in the expected concentrations in the composite film. Further research showed that the introduction of erbium atoms onto the silicon surface leads to minor changes in some signals and the appearance of new vibrations in the Raman spectra of the samples. The decrease in the intensity of the peaks belonging to silicon is associated with the weakening and breaking of some bonds in the structure of the silicon crystal lattice and due to the formation of new bonds in which erbium atoms participate. Thus, the results of this study represent a significant contribution to the understanding of the properties and potential of thin film nanocomposites for applications in optoelectronics, and also enrich our knowledge of the effect of doping on the structure and properties of silicon materials.

Site‐selective Studies of Erbium Ion Defects in Thermally Grown Silicon Oxides

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Characterization of the spin and crystal field Hamiltonian of erbium dopants in silicon

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Erbium Induced Reconstructions On Silicon (100) Substrate

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Defect Structure of Silicon Doped with Erbium

ELECTROLYTE ELECTROREFLECTANCE (EER) SPECTROSCOPY OF ION IMPLANTED SILICON LAYER

Effect of Erbium Incorporation on SiNxOy/c-Si Interface in Silicon-Based Optoelectronic Devices

Room-Temperature Photoluminescence from Er3+ in Si-Er-O and Si-Ge-Er-O Thin Films at High Erbium Concentrations

Rapid quench annealing of Er implanted Si for quantum networking applications