Abstract:Wide-bandgap semiconductors exhibit much larger energy bandgaps than traditional semiconductors such as silicon, rendering them very promising to be applied in the fields of electronics and optoelectronics. Prominent examples of semiconductors include SiC, GaN, ZnO, and diamond, which exhibit distinctive characteristics such as elevated mobility and thermal conductivity. These characteristics facilitate the operation of a wide range of devices, including energy-efficient bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), as well as high-frequency high-electron-mobility transistors (HEMTs) and optoelectronic components such as light-emitting diodes (LEDs) and lasers. These semiconductors are used in building integrated circuits (ICs) to facilitate the operation of power electronics, computer devices, RF systems, and other optoelectronic advancements. These breakthroughs include various applications such as imaging, optical communication, and sensing. Among them, the field of power electronics has witnessed tremendous progress in recent years with the development of wide bandgap (WBG) semiconductor devices , which is capable of switching large currents and voltages rapidly with low losses. However, it has been proven challenging to integrat e these devices with silicon complementary metal oxide semiconductor (CMOS) logic circuits required for complex control functions . The monolithic integration of silicon CMOS with WBG devices increases the complexity of fabricating monolithically integrated smart integrated circuits (ICs). This review article proposes implementing CMOS logic directly on the WBG platform as a solution. However, achieving the CMOS functionalities with the adoption of WBG materials still remains a significant hurdle. This article summarizes the research progress in the fabrication of integrated circuits adopting various WBG materials ranging from SiC to diamond, with the goal of building future smart power ICs.

Silicon-On-Insulator Power Integrated Circuits

Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology

Membrane High Voltage Devices - A Milestone Concept In Power Ics

Monolithic Integration of 5-V Cmos and High-Voltage Devices

Soi Power Devices

Electrical Characterization and Analysis of 4H-Sic Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

High Frequency 700v Powerbrane Ligbts In 0.35 Mu M Bulk Cmos Technology

Power integrated circuits: devices and applications

Ultra-Fast Ligbts And Superjunction Devices In Membrane Technology

A New Double Epitaxial Layer Dielectric Isolation Technology For Hvics

Thick Silicon Membrane Technology for Reliable and High Performance Operation of High Voltage LIGBTs in Power ICs

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

800V Lateral IGBT in Bulk Si for Low Power Compact SMPS Applications

SiC-on-insulator based lateral power device and it' s analytical models

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Lateral IGBT in thin SOI process for high voltage ESD application

Wide bandgap semiconductor-based integrated circuits

Novel Designed SiC Devices for High Power and High Efficiency Systems

Monolithic Integration of SiC Lateral MOSFET with Lateral Schottky Diode for Power Converters

Breaking the Theoretical Limit of SiC Unipolar Power Device - a Simulation Study

Modeling and Design of a Monolithically Integrated Power Converter on SiC