WORM Memory Devices Based on Conformation Change of a PVK Derivative with a Rigid Spacer in Side Chain

Yuanhua Liu,Najun Li,Xuewei Xia,Qingfeng Xu,Jianfeng Ge,Jianmei Lu
DOI: https://doi.org/10.1016/j.matchemphys.2010.05.037
IF: 4.778
2010-01-01
Materials Chemistry and Physics
Abstract:A nonvolatile write-once-read-many-times (WORM) memory device based on poly((4-vinylbenzyl)-9H-carbazole) (PVCz) was fabricated by a simple and conventional process. The as-fabricated device was found to be at its OFF state and could be programmed irreversibly to the ON state with a low transition voltage of −1.7V. The device exhibits a high ON/OFF current ratio of up to 106, high stability in retention time up to 8h and number of read cycles up to 108 under a read voltage of −1.0V in both ON and OFF states. The results of X-ray diffraction (XRD) and fluorescence emission spectra in different states of PVCz indicate that the electrical bistable phenomenon is caused by the voltage-induced conformation change of the pendant carbazole groups. With high performance, low power consumption and low production cost, the device fabricated with PVCz has a potential application for nonvolatile memory.
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