Construction of WORM-type Polyimide Memory Materials with Low Threshold Voltage by Introducing Triazole Units and Conjugated Pendant Groups

Ye Tian,Huiling Liu,Kaixiang Shi,Hongyan Yao,Shaowei Guan
DOI: https://doi.org/10.1016/j.dyepig.2020.108759
IF: 5.122
2020-01-01
Dyes and Pigments
Abstract:Two novel polyimides (PIs) containing triazole unit (TZPEDA-6FDA and TZBPDA-6FDA) are prepared for WORM-type memory devices. The PI-based WORM-type memory devices exhibit low threshold voltage at -2.3 V and -2.6 V, and high ON/OFF current ratio of 10(5). The triazole units serve as the charge traps and endow the PIs with large dipole moment and WORM-type memory behavior. The phenyl and biphenyl pendant groups are separately introduced into TZPEDA-6FDA and TZBPDA-6FDA to expend the conjugate structure of the donor unit and optimize the electrostatic surface potential distribution of the PIs, which are beneficial for improving the charge-carrier migration and reducing the threshold voltage. The WORM-type memory behavior is governed by the combination of Ohmic, trap-limited space charge limited conduction and charge trapping. The two PI-based memory devices have low power consumption and high operation stability, which are important for the production of high-performance programmable permanent WORM-type memory devices.
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