Abstract:Two novel polyimides, PI(CzBD-BTFBPDA) and PI(TPABD-BTFBPDA), consisting of alternating electron-donating 2,2'-bis[4-(9H-carbazol-9-yl)phenyl]- or 2,2'-bis[4-(diphenylamino)phenyl]substituted biphenyl moieties and electron-accepting phthalimide moieties were synthesized and characterized. These polyimides are thermally stable with 5% weight loss over 500 degrees C and the glass transition temperatures of the polyimides were found to be 293 degrees C. The optical band gaps of PI(CzBD-BTFBPDA) and PI(TPABD-BTFBPDA) were 3.42 and 3.30 eV, respectively, indicating the significance of the linkage groups. The estimated energy levels (HOMO, LUMO) of PI(CzBD-BTFBPDA) and PI(TPABD-BTFBPDA) were (-5.51, -2.10) and (-5.22, -2.02) eV, respectively. Resistive switching devices with the configuration of Al/polymer/ITO were constructed from these polyimides by using the conventional solution coating process. The as-fabricated PI(CzBD-BTFBPDA) film exhibited a nonvolatile bipolar write-once-read-many times (WORM) memory character, whereas devices with the PI(TPABD-BTFBPDA) film showed "write-read-erase" flash type memory capability. The ON/OFF current ratios of the devices were both around 106 in the ambient atmosphere. The mechanisms associated with the memory effect were further elucidated from the density functional theory (DFT) method at the B3LYP level with the 6-31G(d) basis set. The present study suggested that the tunable switching behavior could be achieved through the appropriate design of the donor-acceptor PIs structure to have potential applications for memory devices.

Improving Resistive Switching Characteristics of Polyimide-Based Volatile Memory Devices by Introducing Triphenylamine Branched Structures

Hyperbranched Polyimide with Triazole Core Structure for Nonvolatile Resistive Switching Memory

Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups

Inserting Phenylethynyl Linker into Triphenylamine-Based Hyperbranched Polyimide for Effectively Tuning Memory Performance

Synthesis and non-volatile electrical memory characteristics of triphenylamine-based polyimides with flexibility segments

Novel Hyperbranched Polyimides Bearing Bis(trifluoromethyl)‐triphenylamine Moiety: Preparation and Rewritable Nonvolatile Memory Behaviours

Nonvolatile Write-Once Read-Many-Times Memory Behaviors Of Polyimides Containing Tetraphenyl Fluorene Core And The Pendant Triphenylamine Or Carbazole Moieties

Rewritable and non-volatile memory effects based on polyimides containing pendant carbazole and triphenylamine groups

Nonvolatile Electrical Switching and Write-Once Read-Many-Times Memory Effects in Functional Polyimides Containing Triphenylamine and 1,3,4-Oxadiazole Moieties

Nonvolatile Bistable Resistive Switching in A New Polyimide Bearing 9-Phenyl-9h-carbazole Pendant

Volatile Electrical Switching in a Functional Polyimide Containing Electron-Donor and -Acceptor Moieties

Structural Effect On The Resistive Switching Behavior Of Triphenylamine-Based Poly(Azomethine)S

Ternary Memory Property of Novel Polyimide with Backbone Carbazole Moiety and Pendant Triphenylamine Moiety

Volatile Electrical Switching and Static Random Access Memory Effect in a Functional Polyimide Containing Oxadiazole Moieties

Enhanced Intra/Intermolecular Charge Transfer for Efficient Multilevel Resistive Memory

Synthesis of Polyimides Containing Triphenylamine‐substituted Triazole Moieties for Polymer Memory Applications

Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly(triphenylamine).

Construction of WORM-type Polyimide Memory Materials with Low Threshold Voltage by Introducing Triazole Units and Conjugated Pendant Groups

Resistive Polymer Memory Materials Containing Electron Donor and Acceptor Moieties

Resistive switching characteristics of polyimides derived from 2,2'-aryl substituents tetracarboxylic dianhydrides

Nonvolatile electrical switching behavior and mechanism of functional polyimides bearing a pyrrole unit: influence of different side groups