Abstract:The major disadvantages of MXene with abundant low-valence metal species are its poor environmental stability and poor solution processability. The best way to address these problems is to covalently functionalize MXene with highly soluble conjugated polymers, which can not only significantly enhance the environmental stability and solubility of MXene but also further expand its application scope in optoelectronic and electronic devices. By using 4-bromobenzoyl-functionalized MXene (Ti3C2TX) as a key two-dimensional template, poly[(9,9-dihexyl9H-fluorene)-alt-(1,4-diethynylbenzene)] (PDFD) polymer chains were grown directly from the MXene surface via surface-directing Sonogashira-Hagihara polymerization. The achieved PDFD- MXene is highly soluble in common organic solvents. As expected, the as-fabricated Al/PDFD-MXene/ITO device showed bistable electrical switching and nonvolatile resistive random access memory (RRAM) performance. After annealing at 150 degrees C in N2, the observed ON/OFF current ratio and switch-on voltage changed from 9.4 x 103 and 0.90 V before annealing to 7.16 x 104 and 0.46 V after annealing, respectively. In contrast to PDFD-MXene, their blends showed a poor RRAM performance. The achieved ON/OFF current ratio and switch-on voltage were 4.4 x 102 and 1.12 V, respectively. After exposed to damp air, the PDFD- MXene-based device displayed outstanding environmental stability and could work well for at least 60 days at a humidity of 50% and a temperature of 30 degrees C. Unlike PDFD-MXene, their blends-based memory device showed a very unstable performance with increasing relative humidity.

Solution-processable Poly(n-Vinylcarbazole)-covalently Grafted MoS2 Nanosheets for Nonvolatile Rewritable Memory Devices.

Pyrolytically Modified Polyacrylonitrile‐Covalently Grafted MoS2 Nanosheets for a Nonvolatile Rewritable Memory Device

Preparation of MoS₂-polyvinylpyrrolidone nanocomposites for flexible nonvolatile rewritable memory devices with reduced graphene oxide electrodes.

Preparation of MoS2‐Polyvinylpyrrolidone Nanocomposites for Flexible Nonvolatile Rewritable Memory Devices with Reduced Graphene Oxide Electrodes

Nonvolatile Polymer Memory Device Based on Bistable Electrical Switching in A Thin Film of Poly(N-Vinylcarbazole) with Covalently Bonded C-60

Nonvolatile Memory Devices Based on Gold Nanoparticle and Poly (N-Vinylcarbazole) Composite

Resistive Switching Effect of N-doped MoS2-PVP Nanocomposites Films for Nonvolatile Memory Devices

Organophosphorus-based Polymer Covalently Functionalized Reduced Graphene Oxide: In-situ Synthesis and Nonvolatile Memory Effect

Reduced Graphene Oxide Electrodes with Wrinkled Surface for Nonvolatile Polymer Memory Device Compatibility

Viologen-based Conjugated Ionic Polymer for Nonvolatile Rewritable Memory Device

Memory Device Based on MoS 2 -Polyvinyl Alcohol for Simulating Synaptic Behavior

Highly-reproducible Nonvolatile Memristive Devices Based on Polyvinylpyrrolidone: Graphene Quantum-Dot Nanocomposites

An Electrogenerated Chemical-Oxidation-Driving Nonvolatile Plastic Memory Device with the Conjugated Polymer/Carbon Nanotube Blend

Covalent Modification of Graphene Oxide with Poly(N-vinylcarbazole) Containing Pendant Azobenzene Chromophores for Nonvolatile Ternary Memories

Conjugated Polymer-Functionalized 2D MXene Nanosheets for Nonvolatile Memory Devices with High Environmental Stability

Conjugated-Polymer-Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect

Nonvolatile resistance switching memory devices fabricated from the photopolymerized poly( N -vinylcarbazole)-graphene oxide composites

High-Performance C60 Coupled Ferroelectric Enhanced MoS2 Nonvolatile Memory.

Memory devices based on functionalized copolymers exhibiting a linear dependence of switch threshold voltage with the pendant nitro-azobenzene moiety content change

Structural Phase Transition Effect on Resistive Switching Behavior of MoS2 -Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices.

Tunable Nonvolatile Memory Behaviors of PCBM-MoS2 2D Nanocomposites Through Surface Deposition Ratio Control