Field Emission Characteristics from BN-coated Diamond Films

周丹,徐立铭,顾广瑞
DOI: https://doi.org/10.3969/j.issn.1004-4353.2009.03.012
2009-01-01
Abstract:4μm diamond films were deposited on Si by hot filament chemical vapor deposition (HFCVD), then a 100 nm hexangular boron nitride (h-BN) thin films were prepared on diamond films by RF magnetron sputtering physical vapor deposition. The field emission characteristics of diamond films were tested in an ultrahigh vacuum system (<10^(-7) Pa). The field emission characteristics of the diamond films coated with the h-BN thin films were improved clearly, and the threshold field decreased from 14 V/μm to 8 V/μm. The Fowler-Nordheim (F-N) plots showed that the field enhancement factor decreased in the high electric field region, it could be attributed to the change of field emission sites.
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