Field Emission from Diamond Films by Low Voltage Driving
元光,宋航,李树玮,蒋红,缪国庆,金亿鑫,三村秀典,横尾邦义
DOI: https://doi.org/10.3321/j.issn:1000-7032.2003.03.020
2003-01-01
Chinese Journal of Luminescence
Abstract:Vacuum microelectronics has attracted many research fields in electron beam devices due to high potential in their applications, such as field emission display, high frequency and high power devices, etc. An essential requirement among these devices is the development of a noble cathode which produces a stable, high density and uniform electron emission at low driving voltage. Diamond and related materials are the strong candidates as the cathode materials, because the relatively high brightness of field emission from diamond and diamond like carbon films have been observed at low field by the nitrogen doping and some surface treatment of the films, even though its emission mechanism is not clear. Some emission model had been suggested, however, further investigation to understand the emission mechanism of the materials is essential to develop a flat cathode for actual applications to FED and other vacuum microelectronic devices. The paper describes the fabrication of a plane cathode by plating a thin metal film on polycrystalline diamond film and forming a gated cathode with a planar diode structure. It shows an electron emission from the cathode at driving voltage as low as 10V, and the emanative angle of the emitted electrons is smaller than 6° observed from its image on fluorescent screen. In addition, the field emission from a high quality diamond particle shows hardly emissive due to a high barrier height at the interface between the diamond and the substrate which prevents electron injection into the diamond. The emission mechanism was discussed and suggested that the electron emission occurs probably from grain boundaries in a polycrystalline diamond film.