Abstract:Abstract Ion implantation is an important technique in semiconductor processing and has become a key technology for 4H-SiC devices. Today, aluminum (Al) implantations are routinely used for p-type contacts, p + -emitters, terminations and many other applications. However, in all crystalline materials, quite a few ions find a path along a crystal channel, so-called channeling, and these ions travel deep into the crystal. This paper reports on the channeling phenomenon during Al implantation into 4H-SiC, and in particular, the influence of a thin native oxide will be discussed in detail. The effects of thermal lattice vibrations for implantations performed at elevated temperatures will also be elucidated. 100 keV Al ions have been implanted along the [000-1] direction employing samples with 4° miscut. Before implantation, the samples have been aligned using the blocking pattern of backscattered protons. Secondary ion mass spectrometry has been used to record the Al depth distribution. To predict implantation profiles and improve understanding of the role of crystal structure, simulations were performed using the Monte-Carlo binary collision approximation code SIIMPL. Our results show that a thin surface layer of native oxide, less than 1 nm, has a decisive role for de-channeling of aligned implantations. Further, as expected, for implantations at elevated temperatures, a larger degree of de-channeling from major axes is present due to increased thermal vibrations and the penetration depth of channeled aluminum ions is reduced. The values for the mean-square atomic displacements at elevated temperatures have been extracted from experimental depth profiles in combination with simulations.

Abnormal Energy Dependence of Axial Minimum Channeling Yields in Ge X Si 1- X /si(100) Strained Layer Superlattice

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Enhanced Quantum-Confined Pockels Effect Insigesuperlattices

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

Calculation Of Critical Layer Thickness Considering Thermal Strain In Si1-Xgex/Si Strained-Layer Heterostructures

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Influence of a thin amorphous surface layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC

A study of small impact parameter ion channeling effects in thin crystals

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

High-field nonlinear perpendicular transport of electron in GaAs/Al0.3Ga0.7As short-period superlattice

Large Thermoelectric Power Factor in P-type Si (110)/[110] Ultra-Thin-Layers Compared to Differently Oriented Channels

Effects of Uniaxial Strain on Electron Effective Mass and Tunneling Capability of Direct Gap Ge1−xSnx Alloys

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Strain in Algan Layer Studied by Rutherford Backscattering/Channeling and X-Ray Diffraction

In-Plane Optical Anisotropy In Asymmetric Si1-Xgex/Si/Si1-Ygey Superlattices

Effective mass anomalies in strained Si thin films and crystals

Ellipsometric Properties of GexSi1−x Superlattices

Study of a Pure-Ge/Si Short-Period Superlattice by X-Ray Double Crystal Diffraction

The use of channeling-effect techniques to locate interstitial foreign atoms in silicon