Abstract:Strained GexSi1-x/Si superlattices with Ge content of 0.48 and 0.49 grown by MBE at 420°C (sample A) and 570°C (sample B) were annealed and studied by X-ray diffraction, Raman scattering and TEM. The cross section TEM image of the samples before annealing showed that the growth of sample A was two-dimensional, but for sample B, the growth of the GexSi1-x layer was three-dimensional. By the X-ray diffraction spectra before and after annealing for samples A and B, the strain relaxations from X-ray diffraction measurements were 27% and 35% for samples A and B, respectively. This difference might be from the three-dimensional growth of sample B, in which the strain was stronger than that in sample A. Raman scattering measurements showed that the Ge-Ge peak and the Ge-Si peak shifted towards the lower energy after annealing, while the Si-Si peak shifted towards the higher energy. The reason for the shift of these peaks could be explained by the common contribution of the strain relaxation and the internal diffusion of Ge atoms into the Si layer. In addition, the behavior of the strained GexSi1-x/Si superlattice annealed by rapid thermal annealing technology was also studied. A sample of superlattice with a Ge content of 0.46 was rapidly thermal annealed at the temperature range of 600 to 1000°C and at each temperature the sample was annealed twice for 40 s each time. From X-ray diffraction measurements it could be found that as the annealing temperature increased from 600 to 900°C, the strain relaxation would increase from 19% up to 57%. As the sample was annealed at 1000°C, no satellite peaks were in the X-ray diffraction spectra and no multilayer structure could be observed in the cross section TEM image, that is, in the sample the GeSi layers were completely mixed up with the Si layers.

Study of a Pure-Ge/Si Short-Period Superlattice by X-Ray Double Crystal Diffraction

Optical properties of Ge/Si quantum dot superlattices

SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE

Analysis Of Gasb/Gaas Superlattices Structure By Photoluminescence And X-Ray Diffraction

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

High resolution X-ray diffraction study in InAs/GaSb superlattice

Microstructures of Ge/Si Superlattices Growth at Low Temperature

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Local Structures of (ge4/si4)5 Monolayer Strained-Layer Supperlattice Probed by Fluorescence XAFS

Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

Structure and Electronic Properties of SiO2/Si Multilayer Superlattices: Si K Edge and L3,2 Edge X-Ray Absorption Fine Structure Study

An investigation on the thermal stability of the GexSi1-x⧸Si superlattice grown by MBE

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

1.3-Mu M Inas/Gaas Quantum Dots Grown On Si Substrates

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

An X-ray Scattering Study on Inverted Ge–Si Huts Grown at Low Temperatures

Enhanced Quantum-Confined Pockels Effect Insigesuperlattices