Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

The use of channeling-effect techniques to locate interstitial foreign atoms in silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Electronic Structure of Yb/H–Si (111) Interface

Fluorine in Silicon: Diffusion, Trapping, and Precipitation

Germanium in Czochralski Silicon

Influence of a thin amorphous surface layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC

Investigation of interaction between defects in Si by means of monitoring point defect fluxes

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Nanoscale nonlinear effects in Erbium-implanted Yttrium Orthosilicate

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Abnormal Energy Dependence of Axial Minimum Channeling Yields in Ge X Si 1- X /si(100) Strained Layer Superlattice

Structural Properties of Silicon Doped Rare Earth Elements Ytterbium

A study of small impact parameter ion channeling effects in thin crystals

Simulation of interstitial diffusion of ion-implanted boron

Microstructural modifications induced in Si+-implanted yttria-stabilised zirconia: a combined RBS-C, XRD and Raman investigation

Modeling of ion beam induced damage in Si during channeling Rutherford backscattering spectrometry analysis

Coherent X-ray measurements of ion-implantation-induced lattice strains in nano-crystals

Growth Of Pinhole-Free Ytterbium Silicide Film By Solid-State Reaction On Si(001) With A Thin Amorphous Si Interlayer