Abstract:Focussed Ion Beam (FIB) milling is a mainstay of nano-scale machining. By manipulating a tightly focussed beam of energetic ions, often gallium (Ga+), FIB can sculpt nanostructures via localised sputtering. This ability to cut solid matter on the nano-scale has revolutionised sample preparation across the life-, earth- and materials sciences. For example FIB is central to microchip prototyping, 3D material analysis, targeted electron microscopy sample extraction and the nanotechnology behind size-dependent material properties. Despite its widespread usage, detailed understanding of the functional consequences of FIB-induced structural damage, intrinsic to the technique, remains elusive. Here, we present nano-scale measurements of three-dimensional, FIB-induced lattice strains, probed using Bragg Coherent X-ray Diffraction Imaging (BCDI). We observe that even low gallium ion doses, typical of FIB imaging, cause substantial lattice distortions. At higher doses, extended self-organised defect structures appear, giving rise to stresses far in excess of the bulk yield limit. Combined with detailed numerical calculations, these observations provide fundamental insight into the nature of the damage created and the structural instabilities that lead to a surprisingly inhomogeneous morphology.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the detailed mechanisms of lattice strain and structural damage introduced during focused ion beam (FIB) processing. Specifically, the researchers used Bragg coherent X - ray diffraction imaging (BCDI) technology to measure the three - dimensional lattice strain caused by FIB processing on the nanoscale, in order to explore the influence of gallium ion bombardment at different doses on the lattice structure of materials. The key issues of the paper can be summarized as follows: 1. **Influence of low - dose gallium ion bombardment**: - Through experiments, the researchers found that even low - dose gallium ion bombardment (usually used for FIB imaging) can cause significant lattice distortion on the material surface. These distortions are particularly evident near the implantation layer on the top of the crystal. 2. **Influence of high - dose gallium ion bombardment**: - As the dose of gallium ions increases, an extended self - organized defect structure will be formed on the material surface, causing the stress to far exceed the yield limit of the material. These defect structures show an inhomogeneous morphology, indicating that high - dose ion bombardment will lead to more complex lattice damage. 3. **Quantitative analysis of lattice strain and defects**: - By combining experimental data and numerical simulations, the researchers were able to conduct a detailed quantitative analysis of lattice strain and defects. For example, they found that low - dose ion bombardment will lead to lattice contraction, while high - dose will lead to a complex strain distribution, including compression and tensile regions. 4. **Mechanism of microstructural changes**: - The paper also explored the mechanism of microstructural changes caused by ion bombardment. For example, low - dose ion bombardment mainly produces vacancies, while high - dose will lead to larger defect structures, such as the formation of dislocations and defect clusters. Through these studies, the paper provides an in - depth understanding of the material damage mechanism during FIB processing, which is of great significance for optimizing the FIB processing technology and improving the performance of nanostructured materials.

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