Abstract:Enhanced 395nm ultraviolet photoluminescence (PL) has been obtained from the SiO2/Ge SiO2/ SiO2 sandwiched structure. As light source for optical data storage system, this structure will be very useful in optoelectronic integration. Simultaneously, infrared light emission peaked at 780nm was also observed in this novel structure. In this paper, we discussed the origin of the infrared PL in terms of infrared spec- troscopy (FT-IR) and FL excitation (PLE) spectra. The constancy of the 780nm PL band with annealing temperature does suggest that it can not arise from both the quantum confinement on Ge, Si nanocrystals and the oxygen deficient defects of Ge and Si, because PL from these radiative centers all have peak shifts to some extent. The experimental results from FT-IR strongly suggest that the Ge-O-Ge vibration intensity and the 780nm PL intensity have a similar behavior with annealing temperature. So it is reasonable to be- lieve that the infrared PL band is very related to Ge oxides. Further PLE examination results indicate that it has the similar excitation process to the 395nm ultraviolet PL which comes from TⅡ'(T)→S0 optical transitions in GeO color centers, which has been confirmed by many research groups. So we believe that the 780nm PL should also originate from GeO color centers. The schematic diagram of electronic states of GeO molecule is presented to describe the carriers' excitation and recombination process in this kind of centers. The TⅡ'→S0 optical transitions in GeO color center is responsible for the infrared PL. In GeO molecules, all radiative transitions are intramolecular. Thus the PL bands from the GeO color centers are hardly influ- enced by the SiO2 network. That is why 780nm infrared PL has no wavelength change with different annealing temperature. Our work paves the way for the sandwiched structure's device applications.

Optical and Microstructural Properties of Doubly Ge–Si Implanted SiO2 Layers

Origin of Infrared Photoluminescence from SiO_2/Ge: SiO_2/SiO_2 Sandwiched Structure [J]

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

Defect-related Infrared Photoluminescence in Ge+-implanted SiO2 Films

Luminescence from Si/SiO 2 with Si Implantation

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Visible Photoluminescence Induced in Samples by Si Implantation

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Intense UV-visible Photoluminescence from Si/sup +/ and N/sup +/ Co-Implanted Thermal SiO/sub 2/ Films

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Porous Structures and Short-Wavelength Photoluminescence of C + -Implanted SiO 2 Films

Efficient Si-based Light-Emitting Materials Fabricated by Si- and N-coimplanted SiO2 Films

Optical Transmission and Photoluminescence of Silicon Nitride Thin Films Implanted with Si Ions

Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature

Short-wavelength Photoluminescence from Silicon and Nitrogen Coimplanted SiO2 Films

Si-ion implantation-induced luminescence from Si single crystals with a SiO2 overlayer

Photoluminescence from Β-Sic Nanocrystals Embedded in SiO2 Films Prepared by Ion Implantation

Visible Luminescence Induced by Si-Ion Implantation into Si Single Crystals Covered with A Thin Sio2 Layer

Optical properties of Ge/Si quantum dot superlattices

Origin of Photoluminescence Peaks in Ge–SiO2 Thin Films