Abstract:Growing high-quality Si films at high rates with thicknesses ranging from the few nm- to μm-range while keeping the material consumption at a minimum is important for a wide range of Si-based technologies, spanning from batteries to sensors and solar cells. In this work, we elucidate the effects of electron beam deposition (e-beam) conditions on the growth of ~4 μm thick Si layers on bare and thermally oxidized (001)-oriented Si substrates. All depositions are performed from a stabilized and refillable melt of broken B-doped wafers and recollected using Si-shields during deposition for recycling. We find that increasing the deposition rate from 0.3 to 23 nm/s at a substrate temperature of 1000 °C reduces the roughness, void fraction, and residual stress of epitaxial Si-on-Si layers. For Si-on-SiO2, all films are polycrystalline under the same deposition conditions as for Si-on-Si, with a reduction in void fraction and increase in roughness at higher deposition rates. The residual stress for Si-on-SiO2 is comparable across all deposition rates >1 nm/s. Furthermore, we measure lower resistivities in the films than in the feedstock for Si-on-Si and higher than the feedstock for Si-on-SiO2. While the films become microstructurally denser and less defective at higher deposition rates, the resistivity increases for each next deposition step in the case of multi-step depositions from the same feedstock. Time-of-flight scanning secondary mass spectroscopy measurements show that the films have a significantly higher B-concentration than the feedstock, suggesting B-gettering to the melted region and transferring to the Si film upon the e-beam deposition process. This work demonstrates how electron beam evaporation can be used to recollect and recycle waste Si pieces, bringing important insights into how the deposition parameters influence the quality of the deposited polycrystalline as well as epitaxial thin-to-thick films.

Characterization of the Evaporation Behavior of a Β-Sic Target During Electron Beam-Physical Vapor Deposition

Influence of Liquid Evaporation on the Components of SiC High Emissivity Coating

Electron beam-physical vapor deposition of SiC/SiO2 high emissivity thin film

Characterization of a stoichiometric SiC film deposited on a thermally oxidized Si substrate

Composition And Nanohardness Of Sic Films Deposited By Electron Beam Physical Vapor Deposition

Investigation on Thick Silicon Dioxide Films Evaporation by Electron Beam Evaporation

Deposition behavior and mechanism of thermal sprayed SiC

Characterization of Silicon Carbide Films Prepared by Chemical Vapor Deposition

Influence of Remaining C on Hardness and Emissivity of Sic/Sio2 Nanocomposite Coating

X-Ray Characterization Of Beta-Sic Growth And Structural Modification Of Si By Mev Ion Implantation

Investigation of Yb2SiO5/BSAS/Si coating on Cf/SiC composites: processing and steam corrosion behavior

Numerical Simulation of the Growth Characteristics of Laser Chemical Vapor Deposition of Silicon Carbide

Rear Earth Oxide Multilayer Deposited by Plasma Spray-Physical Vapor Deposition for Envisaged Application as Thermal/Environmental Barrier Coating

Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation

GIAXD and XPS study of 3C-SiC film prepared by EB-PVD

Analysis of the Evaporation and Re-Condensation Processes Induced by Pulsed Beam Treatments

Preparation of Silicon Coating on SiC Mirror by EB-PVD

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

A Study of the Microstructure and Mechanical Properties of Sic Coatings on Spherical Particles

Deposition voltages on the phase evolutions, microstructures, and oxidation behaviors of thermal-resistance Glass-MoSi2-SiC coating

Investigation of the bulging mechanism of C/SiC coating through in situ optical observation and numerical simulation