Abstract:Growing high-quality Si films at high rates with thicknesses ranging from the few nm- to μm-range while keeping the material consumption at a minimum is important for a wide range of Si-based technologies, spanning from batteries to sensors and solar cells. In this work, we elucidate the effects of electron beam deposition (e-beam) conditions on the growth of ~4 μm thick Si layers on bare and thermally oxidized (001)-oriented Si substrates. All depositions are performed from a stabilized and refillable melt of broken B-doped wafers and recollected using Si-shields during deposition for recycling. We find that increasing the deposition rate from 0.3 to 23 nm/s at a substrate temperature of 1000 °C reduces the roughness, void fraction, and residual stress of epitaxial Si-on-Si layers. For Si-on-SiO2, all films are polycrystalline under the same deposition conditions as for Si-on-Si, with a reduction in void fraction and increase in roughness at higher deposition rates. The residual stress for Si-on-SiO2 is comparable across all deposition rates >1 nm/s. Furthermore, we measure lower resistivities in the films than in the feedstock for Si-on-Si and higher than the feedstock for Si-on-SiO2. While the films become microstructurally denser and less defective at higher deposition rates, the resistivity increases for each next deposition step in the case of multi-step depositions from the same feedstock. Time-of-flight scanning secondary mass spectroscopy measurements show that the films have a significantly higher B-concentration than the feedstock, suggesting B-gettering to the melted region and transferring to the Si film upon the e-beam deposition process. This work demonstrates how electron beam evaporation can be used to recollect and recycle waste Si pieces, bringing important insights into how the deposition parameters influence the quality of the deposited polycrystalline as well as epitaxial thin-to-thick films.

Characterization of the Evaporation Behavior of a Β-Sic Target During Electron Beam-Physical Vapor Deposition

Investigation on Thick Silicon Dioxide Films Evaporation by Electron Beam Evaporation

Deposition behavior and mechanism of thermal sprayed SiC

Characterization of Silicon Carbide Films Prepared by Chemical Vapor Deposition

X-Ray Characterization Of Beta-Sic Growth And Structural Modification Of Si By Mev Ion Implantation

Investigation of Yb2SiO5/BSAS/Si coating on Cf/SiC composites: processing and steam corrosion behavior

Rear Earth Oxide Multilayer Deposited by Plasma Spray-Physical Vapor Deposition for Envisaged Application as Thermal/Environmental Barrier Coating

Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

Deposition voltages on the phase evolutions, microstructures, and oxidation behaviors of thermal-resistance Glass-MoSi2-SiC coating

Investigation of the bulging mechanism of C/SiC coating through in situ optical observation and numerical simulation

Feasibility of molecular dynamics simulation for process parameter guidance of silicon nitride thin films by PECVD

High-vacuum Electron-Beam Co-Evaporation of Si Nanocrystals Embedded in Al2O3 Matrix

Stress Control and Anti-erosion Characteristics of PECVD SiC Thin Film

High Temperature Oxidation Behavior of SiC Coating Materials

Effect of substrate temperature and annealing on the structure and opto-electrical properties of silicon carbide thin films prepared by e-beam evaporation

Study on the High Speed Chemical Vapor Deposition for SiC Coating

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy