A Novel Approach To Silicon-Nanowire-Assisted Growth Of High-Purity, Single-Crystalline Beta-Si3n4 Nanowires

Jun-Jie Niu,Jian-Nong Wang
DOI: https://doi.org/10.1002/cvde.200706593
2007-01-01
Chemical Vapor Deposition
Abstract:Bundles of single-crystalline beta-Si3N4 nanowires with high purity are successfully synthesized using a simple CVD process with silicon nanowire(SiNW)-assisted growth. The beta-Si3N4 NWs obtained have a small diameter of similar to 30 nm, a single-crystalline structure with [100] or [101] direction, and a thin oxide shell. The photoluminescence and Raman scattering spectra confirm the good crystalline structure. The weak blue-shift of the peaks in Raman scattering compared to bulk beta-Si3N4 is attributed to the phonon confinement effect or laser heating during the measurements. Finally, a possible SiNWs template-assisted growth model is suggested.
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