Abstract:A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatially selective tuning of the QW bandgap in a semiconductor laser structure. High energy (MeV) ion implantation is used to create a large number of vacancies and interstitials in the device. During high temperature processing (rapid thermal annealing), these defects enhance the intermixing of the QW and the barrier materials while being annealed out, producing a blue shift of the QW bandgap. Increases in bandgap energy of greater than 100 nm at 1.55 mu m in InGaAs/lnGaAsP/InP structures can be achieved. Absorption spectroscopy in the waveguide geometry is used to quantify the losses in the structure. Using a simple masking scheme to spatially modify the defect concentration, different regions of a wafer can be blue shifted by different amounts. This allows the integration of many different devices such as lasers, detectors, modulators, amplifiers and waveguides on a single wafer using only a single, postgrowth processing step. The performance of both passive (waveguide) and active (laser and amplifier) devices produced using this technique will be described, as well as the practicality of this technique in the production of photonic integrated circuits.

Halftoning Band Gap Of Inas/Inp Quantum Dots Using Inductively Coupled Argon Plasma-Enhanced Intermixing

Bandgap Engineering of Ingaasp/Inp Laser Structure by Argon Plasma Induced Point Defects

InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Argon Plasma Induced Quantum Well Intermixing Technology

Nitrogen Plasma Enhanced Quantum Well Intermixing in InGaAsP/InP Laser Structure

The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Optical Loss of Bandgap Shifted InGaAsP/InP Waveguide Using Argon Plasma-Enhanced Quantum Well Intermixing

Widely Tunable Intersubband Energy Spacing of Self-Assembled Inas/Gaas Quantum Dots Due to Interface Intermixing

InAs0.45P0.55/InP Strained Multiple Quantum Wells Intermixed by Inductively Coupled Plasma Etching

Bandgap Engineering Of Ingaasp/Inp Multiple Quantum Well Structure By Dielectric Sputtering

Quantum Well Intermixing of InGaAsP/InP Laser Structure by Sputtering Al2O3

Optical Transitions Inpbte∕cdtequantum Dots

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Photonic integrated circuits fabricated using quantum well intermixing

Luminescence Enhancement of Plasma-Etched InAsP∕InGaAsP Quantum Wells

Large bandgap shift by UV excimer laser induced quantum well intermixing for photonic integration

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence