Aberration-Corrected TEM Study of Defects in III-V Films Grown on Si

SH Vajargah,M Couillard,Y Shao,S Tavakoli,R Kleiman,J Preston,GA Botton

DOI: https://doi.org/10.1017/s1431927610062033

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

What problem does this paper attempt to address?

Determination of Atomic Structures of Crystal Defects, Interfaces and Surfaces Via Aberration-Corrected Transmission Electron Microscopy

J Zhu,R Yu,ZY Cheng,T Ling,N Lu,L Xie,ZD Cheng,HH Zhou,XY Zhong

DOI: https://doi.org/10.1017/s1431927610059131

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Quantitative Aberration-corrected Transmission Electron Microscopy

L. Houben,C. L. Jia,K. Tillmann,K. Urban

DOI: https://doi.org/10.1017/s1431927604555745

IF: 4.0991

2004-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.
Electrical Activity of Defects in CdTe Solar Cells via Aberration-corrected STEM

Chen Li,Yelong Wu,Andrew R. Lupini,Anas Mouti,Jonathan D. Poplawsky,Wan-Jian Yin,Naba R. Paudel,M.A. Jassim,Y. Yan,S. J. Pennycook

DOI: https://doi.org/10.1017/S1431927613003668

IF: 4.0991

2013-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.
Applications of Aberration-corrected TEM and STEM in Complex Oxides and Nanostructured Materials

S Lazar,L-Y Chang,L Gunawan,Y Shao,GA Botton

DOI: https://doi.org/10.1017/S1431927609098663

IF: 4.0991

2009-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009
Probing Asymmetric Interfaces of LaMnO3 / SrMnO3 Superlattices with Aberration-Corrected Scanning Transmission Electron Microscopy

AB Shah,SJ May,JG Wen,X Zhai,JN Eckstein,A Bhattacharya,JM Zuo

DOI: https://doi.org/10.1017/s1431927608083529

IF: 4.0991

2008-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008
Direct Mapping of Confined Interfacial States in Oxides Using Aberration Corrected STEM and EELS

AB Shah,JM Zuo,QM Ramasse,JG Wen,X Zhai,A. Bhattacharya,JN Eckstein

DOI: https://doi.org/10.1017/s143192761005631x

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Benefits of Aberration-corrected STEM and EELS in the Study of Nanoscale Materials for Energy and Photonic Applications

F. Nan,S. Hosseini Vajargah,D. Rossouw,S.Y. Woo,M. Bugnet,M.C. Chan,N. Gauquelin,S. Stambula,G. Zhu,G. Botton

DOI: https://doi.org/10.1017/s1431927612003534

IF: 4.0991

2012-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
In Situ TEM Studies of Ferroelectric Thin Films

P Gao,C Nelson,J Jokisaari,S Baek,C Eom,E Wang,X Pan

DOI: https://doi.org/10.1017/s1431927611007689

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Ellen Hieckmann,Markus Nacke,Matthias Allardt,Yury Bodrov,Paul Chekhonin,Werner Skrotzki,Jörg Weber

DOI: https://doi.org/10.3791/53872

2016-05-28

Abstract:Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.
Defects in Tio2 Films on P(+)-Si Studied by Positron Annihilation Spectroscopy

P. G. Coleman,C. J. Edwardson,Anbang Zhang,Xiangyang Ma,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1016/j.mseb.2012.02.023

2012-01-01

Abstract:Variable-energy positron annihilation spectroscopy has been applied to the study of defects in TiO2/p(+)-Si structures, in the as-grown state and after annealing in vacuum and in hydrogen, to investigate whether annealing (and film thickness) resulted in an increase of vacancy-type defects in the oxide films. It was found that the concentration of such defects remained unchanged after vacuum annealing for all films studied, but after H-2 annealing more than doubled for 150 nm-thick films, and increased by an order of magnitude for 100 nm-thick films. The nature of the vacancies was examined further by measuring high-precision annihilation lines and comparing them with a reference Si spectrum. The changes observed in the ratio spectra associated with oxygen electrons suggest that the defects are oxygen vacancies, which have been shown to enhance electroluminescence from TiO2/p(+)-Si heterostructure-based devices. (C) 2012 Elsevier B.V. All rights reserved.
Study of Thin-Film Ferroelectric Heterostructures by TEM and PFM

J Jokisaari,C Nelson,S Kim,P Gao,S Baek,C Eom,X Pan

DOI: https://doi.org/10.1017/s1431927611008117

IF: 4.0991

2011-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
Measuring Atoms in Oxide Heterostructures by Quantitative Aberration-Corrected Transmission Electron Microscopy

K.W. Urban,C.-L. Jia

DOI: https://doi.org/10.1017/s1431927613004911

IF: 4.0991

2013-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.
A STUDY ON THE METASTABLE THERMAL DEFECTS IN REACTIVELY SPUTTERED A-Sige:H FILMS

WANG YIN-YUE,ZHANG FANG-QING,CHEN GUANG-HUA

DOI: https://doi.org/10.7498/aps.39.1661

1990-01-01

Abstract:Thermally induced metastable defects in reactive sputtered a-SiGe:H films are studied by conductivity σ(T) and heterojunction capacitance-voltage (C-V) measure ments.
Defects Study of MOCVD Grown Β-Ga2o3films

Parvaneh Ravadgar,Ray-Hua Horng,Li-Wei Tu,Sing-Liang Ou,Hui-Ping Pan,Shu-De Yao

DOI: https://doi.org/10.1117/12.2002913

2013-01-01

Abstract:Highly (-201) oriented beta-Ga2O3 films prepared by metal-organic chemical vapor deposition on (0001) sapphire substrates, undergone different post annealing temperatures to study their resistivity under harsh environment. Both of Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy (TEM) results are exposing a harmony between oxygen vacancies and gallium interstitials. TEM characterization of samples determines a relationship between interstitials and formation of screw dislocations. Cathodoluminecsnece investigated under different applied voltages is found to be applicable to study chemistry of the bulk and surface of beta-Ga2O3.
Atomic Cluster Structure Identification Using Aberration-corrected Scanning Transmission Electron Microscopy

D. He,A. Logsdail,R. Johnston,R. Palmer,F. Yin,Z. Li,R. Aveyard,J. Yuan

DOI: https://doi.org/10.1017/s1431927612004527

IF: 4.0991

2012-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
Effect of Rapid Thermal Annealing on Threading Dislocation Density in III-V Epilayers Monolithically Grown on Silicon

W. Li,S. Chen,M. Tang,J. Wu,R. Hogg,A. Seeds,H. Liu,I. Ross

DOI: https://doi.org/10.1063/1.5011161

IF: 2.877

2018-01-01

Journal of Applied Physics

Abstract:In this work, we give a direct interpretation of micrographs of the 60° and 90° defect core at the GaAs/Si interface using aberration corrected scanning transmission electron microscopy. We investigate the post-growth annealing effects on dislocation rearrangement at the interface as well as the threading dislocations in buffer layers; finally, the density of threading dislocations has been calculated as a function of annealing temperature.
Surface Morphology and Composition Studies in InGaN/GaN Film Grown by MOCVD

陶涛,张曌,刘炼,苏辉,谢自力,张荣,刘斌,修向前,李毅,韩平,施毅,郑有炓

DOI: https://doi.org/10.1088/1674-4926/32/8/083002

2011-01-01

Journal of Semiconductors

Abstract:>InGaN films were deposited on(0001) sapphire substrates with GaN buffer layers under different growth temperatures by metalorganic chemical vapor deposition.The In-composition of InGaN film was approximately controlled by changing the growth temperature.The connection between the growth temperature,In content,surface morphology and defect formation was obtained by X-ray diffraction,scanning electron microscopy(SEM) and atomic force microscopy(AFM).Meanwhile,by comparing the SEM and AFM surface morphology images,we proposed several models of three different defects and discussed the mechanism of formation.The prominent effect of higher growth temperature on the quality of the InGaN films and defect control were found by studying InGaN films at various growth temperatures.
Strategies for Aberration Control in Sub-Angstrom HRTEM

A Thust,J Barthel,L Houben,C L Jia,M Lentzen,K Tillmann,K Urban

DOI: https://doi.org/10.1017/s1431927605503386

IF: 4.0991

2005-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005
Aberration Corrected STEM Analysis of Gold Nanoparticle Catalytic Activity

A. R. Lupini,A. G. Franceschetti,S. T. Pantelides,S. Dai,B. Chen,W. Yan,S. H. Overbury,S. J. Pennycook

DOI: https://doi.org/10.1017/s1431927604885957

IF: 4.0991

2004-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.
Microstructure of Ferroelectric BaTiO3 Thin Films on Ti Substrate

J He,JC Jiang,EI Meletis,Z Yuan,J Liu,J Weaver,CL Chen,B Lin,V Giurgiutiu,RY Guo,A Bhalla

DOI: https://doi.org/10.1017/s143192760808745x

IF: 4.0991

2008-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Aberration-Corrected TEM Study of Defects in III-V Films Grown on Si

Determination of Atomic Structures of Crystal Defects, Interfaces and Surfaces Via Aberration-Corrected Transmission Electron Microscopy

Quantitative Aberration-corrected Transmission Electron Microscopy

Electrical Activity of Defects in CdTe Solar Cells via Aberration-corrected STEM

Applications of Aberration-corrected TEM and STEM in Complex Oxides and Nanostructured Materials

Probing Asymmetric Interfaces of LaMnO3 / SrMnO3 Superlattices with Aberration-Corrected Scanning Transmission Electron Microscopy

Direct Mapping of Confined Interfacial States in Oxides Using Aberration Corrected STEM and EELS

Benefits of Aberration-corrected STEM and EELS in the Study of Nanoscale Materials for Energy and Photonic Applications

In Situ TEM Studies of Ferroelectric Thin Films

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Defects in Tio2 Films on P(+)-Si Studied by Positron Annihilation Spectroscopy

Study of Thin-Film Ferroelectric Heterostructures by TEM and PFM

Measuring Atoms in Oxide Heterostructures by Quantitative Aberration-Corrected Transmission Electron Microscopy

A STUDY ON THE METASTABLE THERMAL DEFECTS IN REACTIVELY SPUTTERED A-Sige:H FILMS

Defects Study of MOCVD Grown Β-Ga2o3films

Atomic Cluster Structure Identification Using Aberration-corrected Scanning Transmission Electron Microscopy

Effect of Rapid Thermal Annealing on Threading Dislocation Density in III-V Epilayers Monolithically Grown on Silicon

Surface Morphology and Composition Studies in InGaN/GaN Film Grown by MOCVD

Strategies for Aberration Control in Sub-Angstrom HRTEM

Aberration Corrected STEM Analysis of Gold Nanoparticle Catalytic Activity

Microstructure of Ferroelectric BaTiO3 Thin Films on Ti Substrate