Electrical Activity of Defects in CdTe Solar Cells via Aberration-corrected STEM

Chen Li,Yelong Wu,Andrew R. Lupini,Anas Mouti,Jonathan D. Poplawsky,Wan-Jian Yin,Naba R. Paudel,M.A. Jassim,Y. Yan,S. J. Pennycook

DOI: https://doi.org/10.1017/S1431927613003668

IF: 4.0991

2013-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

What problem does this paper attempt to address?

From Atomic Structure to Photovoltaic Properties in CdTe Solar Cells

Chen Li,Jonathan Poplawsky,Yelong Wu,Andrew R. Lupini,Anas Mouti,Donovan N. Leonard,Naba Paudel,Kim Jones,Wanjian Yin,Mowafak Al-Jassim,Yanfa Yan,Stephen J. Pennycook

DOI: https://doi.org/10.1016/j.ultramic.2013.06.010

IF: 2.994

2013-01-01

Ultramicroscopy

Abstract:Aberration corrected scanning transmission electron microscopy (STEM) has been used to determine the structures of a variety of dislocation cores in CdTe, including 30° and 90° Shockley partial dislocations, positive and negative Frank sessile partial dislocations, and steps on twin boundaries. Structure models have been constructed from the images and electrical activity has been investigated with density functional calculations. An integrated electron energy loss spectroscopy, cathodoluminescence and electron beam induced current system has been designed and built to probe electrical and optical properties of individual defects. The first STEM-cathodoluminescence result shows strong impurity segregation between the CdTe and the glass. The correlation between the scanning electron microscopy-electron beam induced current and electron backscatter diffraction maps proves that the grain structures and boundaries dominate the electrical activity. After heat treatment in CdCl2, Cl is found to segregate to the grain boundaries, and they show higher efficiency than the bulk material.
Understanding Individual Defects in CdTe Solar Cells: From Atomic Structure to Electrical Activity

chen li,yelong wu,jonathan d poplawsky,naba r paudel,timothy j pennycook,sarah j haigh,andrew r lupini,mark p oxley,yanfa yan,s j pennycook

DOI: https://doi.org/10.1017/S1431927614004310

IF: 4.0991

2014-01-01

Microscopy and Microanalysis

Abstract:1 Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA 2 Department of Chemistry, Vanderbilt University, Nashville, TN, USA 3 Department of Physics and Astronomy, The University of Toledo, Toledo, OH, USA 4 Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA 5 Department of Materials, University of Oxford, Oxford, OX13PH, UK 6 SuperSTEM Laboratory, Daresbury, WA44AD, UK 7 School of Materials, University of Manchester, Manchester, M139PL, UK
Benefits of Aberration-corrected STEM and EELS in the Study of Nanoscale Materials for Energy and Photonic Applications

F. Nan,S. Hosseini Vajargah,D. Rossouw,S.Y. Woo,M. Bugnet,M.C. Chan,N. Gauquelin,S. Stambula,G. Zhu,G. Botton

DOI: https://doi.org/10.1017/s1431927612003534

IF: 4.0991

2012-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
Determination of Atomic Structures of Crystal Defects, Interfaces and Surfaces Via Aberration-Corrected Transmission Electron Microscopy

J Zhu,R Yu,ZY Cheng,T Ling,N Lu,L Xie,ZD Cheng,HH Zhou,XY Zhong

DOI: https://doi.org/10.1017/s1431927610059131

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Quantitative Aberration-corrected Transmission Electron Microscopy

L. Houben,C. L. Jia,K. Tillmann,K. Urban

DOI: https://doi.org/10.1017/s1431927604555745

IF: 4.0991

2004-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.
Study of Defects in Sb2Se3 Solar Cells Via Admittance Spectroscopy

Xiaobo Hu,Jiahua Tao,Shaoqiang Chen,Junhao Chu

DOI: https://doi.org/10.1364/fts.2018.jt2a.32

2018-01-01

Abstract:Get PDF Email Share Share with Facebook Tweet This Post on reddit Share with LinkedIn Add to CiteULike Add to Mendeley Add to BibSonomy Get Citation Copy Citation Text X. Hu, J. Tao, S. Chen, and J. Chu, "Study of defects in Sb2Se3 solar cells via admittance spectroscopy," in Light, Energy and the Environment 2018 (E2, FTS, HISE, SOLAR, SSL), OSA Technical Digest (Optica Publishing Group, 2018), paper JT2A.32. Export Citation BibTex Endnote (RIS) HTML Plain Text Citation alert Save article
Aberration-Corrected Scanning Transmission Electron Microscopy: from Atomic Imaging and Analysis to Solving Energy Problems

S. J. Pennycook,M. F. Chisholm,A. R. Lupini,M. Varela,A. Y. Borisevich,M. P. Oxley,W. D. Luo,K. van Benthem,S. -H. Oh,D. L. Sales,S. I. Molina,J. Garcia-Barriocanal,C. Leon,J. Santamaria,S. N. Rashkeev,S. T. Pantelides

DOI: https://doi.org/10.1098/rsta.2009.0112

2009-01-01

Abstract:The new possibilities of aberration-corrected scanning transmission electron microscopy (STEM) extend far beyond the factor of 2 or more in lateral resolution that was the original motivation. The smaller probe also gives enhanced single atom sensitivity, both for imaging and for spectroscopy, enabling light elements to be detected in a Z-contrast image and giving much improved phase contrast imaging using the bright field detector with pixel-by-pixel correlation with the Z-contrast image. Furthermore, the increased probe-forming aperture brings significant depth sensitivity and the possibility of optical sectioning to extract information in three dimensions. This paper reviews these recent advances with reference to several applications of relevance to energy, the origin of the low-temperature catalytic activity of nanophase Au, the nucleation and growth of semiconducting nanowires, and the origin of the eight orders of magnitude increased ionic conductivity in oxide superlattices. Possible future directions of aberration-corrected STEM for solving energy problems are outlined.
Interface Structure-Property Relations Through Aberration-Corrected STEM

SJ Pennycook,AY Borisevich,M Varela,AR Lupini,HJ Chang,DN Leonard,TJ Pennycook,MP Oxley,JC Idrobo,H Yurdakul,S Turan,P Yu,R Ramesh,ST Pantelides

DOI: https://doi.org/10.1017/s1431927610059787

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Aberration-Corrected TEM Study of Defects in III-V Films Grown on Si

SH Vajargah,M Couillard,Y Shao,S Tavakoli,R Kleiman,J Preston,GA Botton

DOI: https://doi.org/10.1017/s1431927610062033

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Identification of Deep Level Defects in CdTe Solar Cells Using Transient Photo Capacitance Spectroscopy

Chuang Li,Xia Hao,Yulu He,Jingquan Zhang,Lili Wu,Wei Li,Wenwu Wang,Lianghuan Feng,Islam Muhammad Monirul,Katsuhiro Akimoto,Takeaki Sakurai

DOI: https://doi.org/10.35848/1347-4065/abcdac

IF: 1.5

2020-01-01

Japanese Journal of Applied Physics

Abstract:The carrier lifetime in CdTe is strongly limited by the nonradiative recombination via defects. Here, deep level defects in CdTe thin-film solar cells are revealed by transient photo-capacitance (TPC) measurement. A broad defect band centered at 1.07 eV above the valance band is identified at 90 K. The defect signal is reduced with the insertion of the CdSe layer between the CdS/CdTe heterojunction. The TPC signals are rapidly quenched with increased temperature, which suggests that this deep level defect is highly possible to act as an effective recombination center. Based on the thermal quenching model, the activation energy ( E a ) of the defect is estimated to be ∼0.2 eV. With the configuration coordinate model, the temperature-dependent TPC signal and the corresponding electronic transition process can be well interpreted. All the observations strongly indicate that the introduction of Se atoms into CdTe is promising to suppress the formation of deep defects.
Direct Mapping of Confined Interfacial States in Oxides Using Aberration Corrected STEM and EELS

AB Shah,JM Zuo,QM Ramasse,JG Wen,X Zhai,A. Bhattacharya,JN Eckstein

DOI: https://doi.org/10.1017/s143192761005631x

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Aberration Corrected STEM Analysis of Gold Nanoparticle Catalytic Activity

A. R. Lupini,A. G. Franceschetti,S. T. Pantelides,S. Dai,B. Chen,W. Yan,S. H. Overbury,S. J. Pennycook

DOI: https://doi.org/10.1017/s1431927604885957

IF: 4.0991

2004-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.
Atomic Cluster Structure Identification Using Aberration-corrected Scanning Transmission Electron Microscopy

D. He,A. Logsdail,R. Johnston,R. Palmer,F. Yin,Z. Li,R. Aveyard,J. Yuan

DOI: https://doi.org/10.1017/s1431927612004527

IF: 4.0991

2012-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
Progress and Prospects of Aberration-Corrected STEM for Functional Materials.

Haijun Wu,Xiaoxu Zhao,Dongsheng Song,Feng Tian,John Wang,Kian Ping Loh,Stephen J Pennycook

DOI: https://doi.org/10.1016/j.ultramic.2018.08.007

IF: 2.994

2018-01-01

Ultramicroscopy

Abstract:Aberration-corrected scanning transmission electron microscopy (STEM) provides real space imaging and spectroscopy at atomic resolution with a new level of sensitivity to structure, bonding, elemental valence and even dynamics. It has developed into the most powerful characterization and even fabrication platform for all materials, especially for functional materials with complex structural features that dynamically respond to external fields. Several representative examples of functional materials are shown, including piezoelectric and photoelectric materials, functional oxide interfaces, metal-organic framework (MOF)-derived transition metal oxide/phosphide catalysts and two-dimensional (2D) materials. In piezoelectric systems, atomic-resolution polarization mapping by Z-contrast imaging shows the intimate coexistence of two ferroelectric phases inside nanodomains. Quantitative STEM imaging and EELS spectroscopy reveal the underlying mechanism of the exotic coupling between polarization and charge at a functional oxide interface. Under the low-voltage STEM, defects in 2D materials are clearly visible, for example novel edges and single atom dopants. The dynamic behavior of single atoms in vacancies of monolayer MoS2 is shown to highlight the electron-beam induced nanofabrication ability of aberration-corrected STEM. Thanks to the rapid development of segmented/pixelated detectors, differential phase contrast and 4D STEM techniques are promising for the near future, providing more opportunities to understand the link between structure and functionality.
Investigation of Point Defects by Aberration-Corrected STEM and First-Principles Theory

Stephen J. Pennycook,María Varela del Arco,Andrew R. Lupini,Albina Y. Borisevich,Weidong Luo,D. Kumar,Sang Ho Oh,Per‐Erik Werner,N. D. Zakharov,Sergio I Molina Rubio,Klaus van Benthem,Sergey N. Rashkeev,Kelli Griffin,Kannan M. Krishnan,Sokrates T. Pantelides

2008-01-01

Abstract:The successful correction of aberrations in scanning transmission electron microscopy (STEM) has improved lateral resolution by more than a factor of two [1], brought greatly enhanced sensitivity for imaging individual atoms, and depth resolution of a few nanometers [2-4]. In zone axis crystals, columnar channeling tends to reduce the depth resolution, and image simulations are necessary to establish the depth sensitivity [5]. To illustrate this capability, images from Si nanowires grown by a Au-catalyzed vapour-liquid-solid method will be presented [6]. A high density of Au atoms are seen not only on the surface of the nanowires, but, by changing focus, are seen also in the bulk of the nanowire, as shown in Fig. 1. The gold atoms move under the influence of the beam, and may not be present in the as-grown material. However, substitutional and three interstitial configurations are found, which are confirmed by density functional calculations to be stable (substitutional) or metastable (interstitial) sites. Furthermore, the number density of the different configurations correlates with their calculated defect formation energies. As a second example of the identification of a point defect complex, the origin of ferromagnetism in Co-doped anatase will be shown by a combination of imaging, EELS andmore » theory to be a Co-Ti+3-VO complex [7].« less
Grain boundary strain localization in CdTe solar cell revealed by Scanning 3D X-ray diffraction microscopy

A. Shukla,J. Wright,A. Henningsson,H. Stieglitz,E. Colegrove,L. Besley,C. Baur,S De Angelis,M. Stuckelberger,H.F. Poulsen,J.W. Andreasen

2024-02-11

Abstract:Cadmium Telluride (CdTe) solar cell technology is a promising candidate to help boost green energy production. However, impurities and structural defects are major barriers to improving the solar power conversion efficiency. Grain boundaries often act as aggregation sites for impurities, resulting in strain localization in areas of high diffusion. In this study, we demonstrate the use of scanning 3D X-ray diffraction microscopy to non-destructively make 3D maps of the grains, their phase, orientation, and local strain within a CdTe solar cell absorber layer with a resolution of 100 nm. We quantify twin boundaries and suggest how they affect grain size and orientation distribution. Local strain analysis reveals that strain is primarily associated with high misorientation grain boundaries, whereas twin boundaries do not show high strain values. We also observe that high-strain grain boundaries form a continuous pathway connected to the CdS layer. Hence, this high-strain region is believed to be associated with the diffusion of sulfur from the CdS layer along grain boundaries. This hypothesis is supported by SEM EDS and X-ray fluorescence experiments. The method and analysis demonstrated in this work can be applied to different polycrystalline materials where the characterization of grain boundary properties is essential to understand the microstructural phenomena.

Materials Science,Applied Physics
Column-By-Column Observation of Dislocation Motion in Cdte: Dynamic Scanning Transmission Electron Microscopy

Chen Li,Yu-Yang Zhang,Timothy J. Pennycook,Yelong Wu,Andrew R. Lupini,Naba Paudel,Sokrates T. Pantelides,Yanfa Yan,Stephen J. Pennycook

DOI: https://doi.org/10.1063/1.4963765

IF: 4

2016-01-01

Applied Physics Letters

Abstract:The dynamics of partial dislocations in CdTe have been observed at the atomic scale using aberration-corrected scanning transmission electron microscopy (STEM), allowing the mobility of different dislocations to be directly compared: Cd-core Shockley partial dislocations are more mobile than Te-core partials, and dislocation cores with unpaired columns have higher mobility than those without unpaired columns. The dynamic imaging also provides insight into the process by which the dislocations glide. Dislocations with dangling bonds on unpaired columns are found to be more mobile because the dangling bonds mediate the bond exchanges required for the dislocations to move. Furthermore, a screw dislocation has been resolved to dissociate into a Shockley partial-dislocation pair along two different directions, revealing a way for the screw dislocation to glide in the material. The results show that dynamic STEM imaging has the potential to uncover the details of dislocation motion not easily accessible by other means.
Understanding The Role Of Se In Defect Reduction In Cdte Photovoltaics

Chuang Li,Xia Hao,Jingquan Zhang,Lili Wu,Wei Li,Wenwu Wang,Lianghuan Feng,Takeaki Sakurai

DOI: https://doi.org/10.1109/PVSC45281.2020.9300533

2020-01-01

Abstract:CdTe devices with CdTe and CdTeSe/CdTe as absorber layer were fabricated. The highest short circuit current density reaches 28.73mA/cm(2) of CdTeSe/CdTe device. Besides, defects of devices with different absorber layers were investigated using admittance. A shallow defect with activation energy of 0.09eV was only detected in CdSeTe/CdTe device, which may assign to the hydrogenic defects in CdSeTe alloy. A defect with activation energy of 0.34eV was detected in both devices which might relate to the native impurities. And the defect with activation energy of 0.55eV was only observed in CdTe only devices. Overall, Se is significant to reduce defects in CdTe.
Grain boundary strain localization in a CdTe solar cell revealed by Scanning 3D X-ray diffraction microscopy

Aditya Shukla,Jonathan Wright,Axel Henningsson,Hergen Stieglitz,Eric Colegrove,Luke Besley,Christian Baur,Salvatore De Angelis,Michael E. Stuckelberger,Henning Friis Poulsen,Jens Wenzel Andreasen

DOI: https://doi.org/10.1039/d4ta01799d

IF: 11.9

2024-06-11

Journal of Materials Chemistry A

Abstract:Cadmium Telluride (CdTe) solar cell technology is a promising candidate to help boost green energy production. However, impurities and structural defects are major barriers to improving the solar power conversion efficiency. Grain boundaries often act as aggregation sites for impurities, resulting in strain localization in areas of high diffusion. In this study, we demonstrate the use of scanning 3D X-ray diffraction microscopy to non-destructively make 3D maps of the grains – their phase, orientation, and local strain – within a CdTe solar cell absorber layer with a resolution of 100 nm. We quantify twin boundaries and suggest how they affect grain size and orientation distribution. Local strain analysis reveals that strain is primarily associated with high misorientation grain boundaries, whereas twin boundaries do not show high strain values. We also observe that high-strain grain boundaries form a continuous pathway connected to the CdS layer. Hence, this high-strain region is believed to be associated with the diffusion of sulfur from the CdS layer along grain boundaries. This hypothesis is supported by SEM-EDS and X-ray fluorescence experiments. The method and analysis demonstrated in this work can be applied to different polycrystalline materials where the characterization of grain boundary properties is essential to understand the microstructural phenomena.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Seeing into Materials with Aberration-corrected STEM and First-Principles Theory

SJ Pennycook,MF Chisholm,MP Oxley,M Varela,TJ Pennycook,W Luo

2010-01-01

Abstract:The recent introduction of next-generation aberration correctors has brought another leap forward in capability for the scanning transmission electron microscope (STEM), allowing quantitative imaging of individual light atoms with the annular dark field (ADF) detector and two-dimensional spectroscopic mapping of composition and electronic structure. Results will be presented from graphene and BN resolving the sixmembered rings and distinguishing individual B, C, N and O atoms, as shown in FIG. 1 [1]. Adatoms, defects, step edge sites and substitutional impurity sites will be shown and compared to results of density functional calculations. Yttria-stabilized zirconia (YSZ)/strontium titanate (STO) epitaxial heterostructures with nanometer layer thicknesses have recently been shown to exhibit eight orders of magnitude increase in ionic conductivity near room temperatures [2]. STEM images (FIG. 2) show the YSZ layers to be coherent and highly strained, while EELS shows disorder in the O sublattice at the interface indicative of a high vacancy concentration. Density functional simulations show O to be far more mobile in the strained structure, with a greatly reduced migration energy barrier consistent with experiment [3]. Finally, the location and configurations of point defects will be presented. The point defect complex responsible for room temperature ferromagnetism in Co-doped anatase is identified [4]. O interstitials predicted to occupy specific N columns in αSi3N4 are confirmed by experiment, and are the likely stabilization mechanism for the α phase [5]. Au atom configurations in Si nanowires are seen by depth-resolved STEM and are in agreement with theoretical predictions. Number densities are also in accord with theoretical formation energies [6]. Research sponsored by the US DOE, Division of Materials Sciences and Engineering, the SHaRE User Facility sponsored by the Division of Scientific User Facilities, DE-FG02-1209ER46554 (T.J.P., S.T.P.), NSF DMR-0605964 and DMR0513048 (J.-C.I.), and by the McMinn Endowment (S.T.P.) at Vanderbilt University. Computations were supported by the National Center for Supercomputing Applications and National Energy Research Scientific Computing Center.

Electrical Activity of Defects in CdTe Solar Cells via Aberration-corrected STEM

From Atomic Structure to Photovoltaic Properties in CdTe Solar Cells

Understanding Individual Defects in CdTe Solar Cells: From Atomic Structure to Electrical Activity

Benefits of Aberration-corrected STEM and EELS in the Study of Nanoscale Materials for Energy and Photonic Applications

Determination of Atomic Structures of Crystal Defects, Interfaces and Surfaces Via Aberration-Corrected Transmission Electron Microscopy

Quantitative Aberration-corrected Transmission Electron Microscopy

Study of Defects in Sb2Se3 Solar Cells Via Admittance Spectroscopy

Aberration-Corrected Scanning Transmission Electron Microscopy: from Atomic Imaging and Analysis to Solving Energy Problems

Interface Structure-Property Relations Through Aberration-Corrected STEM

Aberration-Corrected TEM Study of Defects in III-V Films Grown on Si

Identification of Deep Level Defects in CdTe Solar Cells Using Transient Photo Capacitance Spectroscopy

Direct Mapping of Confined Interfacial States in Oxides Using Aberration Corrected STEM and EELS

Aberration Corrected STEM Analysis of Gold Nanoparticle Catalytic Activity

Atomic Cluster Structure Identification Using Aberration-corrected Scanning Transmission Electron Microscopy

Progress and Prospects of Aberration-Corrected STEM for Functional Materials.

Investigation of Point Defects by Aberration-Corrected STEM and First-Principles Theory

Grain boundary strain localization in CdTe solar cell revealed by Scanning 3D X-ray diffraction microscopy

Column-By-Column Observation of Dislocation Motion in Cdte: Dynamic Scanning Transmission Electron Microscopy

Understanding The Role Of Se In Defect Reduction In Cdte Photovoltaics

Grain boundary strain localization in a CdTe solar cell revealed by Scanning 3D X-ray diffraction microscopy

Seeing into Materials with Aberration-corrected STEM and First-Principles Theory