Abstract:Electron microscopy has been revolutionized by the advent of the aberration corrector and advances in detector both for imaging and spectroscopy. Aberration correction dramatically improved spatial resolution into the sub-ångstrom regime, while new detectors have unlocked information about materials that was previously only imaginable.While these recent advances have proven essential to the atomic scale characterization of materials, many measurements have remained largely semi-quantitative. In particular, accuracy and precision for scanning transmission electron microscopy (STEM) was significantly hampered by the presence of sample drift and scan distortion. Until recently, this limitation has obscured the capabilities to characterize minute changes to the atomic structure that can ultimately define material properties. In this talk, we will introduce revolving scanning transmission electron microscopy (RevSTEM) for the characterization of semiconductors. The method uses a series of fast-acquisition STEM images, but with the scan coordinates rotated between successive frames. This scan rotation introduces a concomitant change in image distortion that is then used to analyze the sample drift rate and direction. Multiple case studies will be presented to demonstrate the power of this technique to characterize electronic materials. For example, we will show how picometer level precision and accuracy enabled the capability to directly quantify ferroelectric HfO2 thin films. We will also show how RevSTEM images can be used to accurately determine crystallographic parameters in real-space, and to determine the structural origins of polarization. When combined with modern spectroscopy tools, the technique can directly inform growth mechanisms in AlN based materials for fabrication of quantum well structures. Specifically, We will show the interface quality between various AlGaN/AlN quantum wells using a combination of high-angle annular dark-field (HAADF) imaging and energy dispersive X-ray spectroscopy (EDS). We will show that we can directly measure the lattice parameters for each layer and how they vary across each AlN/AlGaN interface. Using EDS, we correlate the lattice parameters and lattice parameter values to the chemical composition in each layer. We show that throughout multiple quantum well structures, there is an asymmetrical interface with a diffusion of Ga on one side of the AlGaN layer. Further, we will discuss fluctuation in the composition present throughout each layer and the role on the local strain distribution.

Seeing into Materials with Aberration-corrected STEM and First-Principles Theory

Tracking Atoms, Vacancies and Electrons via Aberration-corrected Microscopy and First-Principles Theory

Progress and Prospects of Aberration-Corrected STEM for Functional Materials.

Investigation of Point Defects by Aberration-Corrected STEM and First-Principles Theory

Aberration-Corrected Scanning Transmission Electron Microscopy: from Atomic Imaging and Analysis to Solving Energy Problems

Aberration-corrected Scanning Transmission Electron Microscopy for Complex Transition Metal Oxides

Decoding the Structural Origin of Piezoelectric and Thermoelectric Materials with Aberration-Corrected STEM

Uncovering Structure-Properties Relations in Fuel Cells and Catalysts with Quantitative Aberration-Corrected STEM and EELS

Quantifying the Structure and Chemistry of Semiconductor Devices with the Latest Advancements in Scanning Transmission Electron Microscopy

B23-O-04Probing the Atomic and Electronic Structure in Materials Through Aberration-Corrected Scanning Transmission Electron Microscopy

Atomic-level Quantitative Analysis of Electronic Functional Materials in Aberration-corrected STEM

Low-voltage single-atom electron microscopy with carbon-based nanomaterials

Aberration corrected STEM and EELS: Atomic scale chemical mapping

High-Resolution Stem and Eels As Tools to Study Structure and Bonding of Oxides

Materials Structure, Properties and Dynamics through Scanning Transmission Electron Microscopy

Aberration-corrected STEM Imaging of 2D Materials: Artifacts and Practical Applications of Threefold Astigmatism.

The Atomic Circus: Small Electron Beams Spotlight Advanced Materials Down to the Atomic Scale

Material structure, properties, and dynamics through scanning transmission electron microscopy

Imaging, Core-Loss, and Low-Loss Electron-Energy-Loss Spectroscopy Mapping in Aberration-Corrected STEM

Seeing Inside Materials by Aberration-Corrected Electron Microscopy

Angstrom-Scale Imaging of Magnetization in Antiferromagnetic Fe$_2$As Via 4D-STEM