Preparation and Properties of Bi 4 − x Nd x Ti 3 O 12 Thin Films by Chemical Solution Deposition
Wataru Sakamoto,Mio Yamada,Naoya Iizawa,Yu-Ki Mizutani,Daichi Togawa,Koichi Kikuta,Toshinobu Yogo,Takashi Hayashi,Shin-Ichi Hirano
DOI: https://doi.org/10.1007/s10832-004-5123-x
2004-01-01
Journal of Electroceramics
Abstract:Neodymium-modified Bi 4 Ti 3 O 12 , (Bi, Nd) 4 Ti 3 O 12 (BNT) ferroelectric thin films have been prepared on Pt/TiO x /SiO 2 /Si substrates using metal-organic precursor solutions by the chemical solution deposition method. The BNT precursor films crystallized into the Bi layered perovskite Bi 4 Ti 3 O 12 (BIT) as a single-phase above 600 ∘ C. The synthesized BNT films revealed a random orientation having a strong 117 reflection, whereas non-substituted BIT thin films exhibited a random orientation with strong 00 l diffractions. Among Bi 4 − x Nd x Ti 3 O 12 [ x = 0.0, 0.5, 0.75, 1.0] thin films, Bi 3.25 Nd 0.75 Ti 3 O 12 thin films showed a well-saturated P-E hysteresis loop with the highest P r (22 μ C/cm 2 ) and a low E c (69 kV/cm) at an applied voltage of 5 V. The Nd-substitution with the optimum amount for the Bi site in the BIT structure was effective not only for promoting the 117 preferred orientation but also for improving the microstructure and ferroelectric properties of the resultant films.