Metallization development for AIN/W cofired substrate at low temperature

Liang Tongxiang,Fu Xiaoming,Qiu Xueliang,Tang Chunhe,Hengde Li
DOI: https://doi.org/10.1023/A:1015262423689
IF: 4.5
2002-01-01
Journal of Materials Science
Abstract:In this paper, metallization properties of AlN/W cofired substrate sintered at 1650°C were studied. The adhesion strength between W and AlN ceramic was improved by some methods, which including addition of several kinds of oxides mixture or metallic particles into W thick film ink. When MgO-Al 2 O 3 -SiO 2 was used, glass bonding increased the adhesion strength and when metallic particles were added, W conductor resistance decreased obviously.
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