XPS and AES Analyses of Chromium Oxide Films Prepared by Ion-Beam Assisted Deposition

DAI Haiyang,WANG Zhi'an,HUANG Ningkang

DOI: https://doi.org/10.3321/j.issn:0253-3219.2007.05.006

2007-01-01

Nuclear Techniques

Abstract:Chromium oxide films were prepared at room temperature by ion-beam assisted deposition (IBAD), in which chromium was deposited by 1 keV Ar{sup +} ion sputtering on stainless steel substrates before bombarding the film by 100 keV Ar{sup +} or O{sup +} beam, while pure oxygen gas was introduced into the vacuum chamber. The film samples were characterized by XPS and AES. The results show that components of the films prepared by Ar{sup +} beam bombardment are mainly Cr{sub 2}O{sub 3}, whereas the films bombarded by the O{sup +} beam consist of oxides of different chromium valences. The films prepared by the Ar{sup +} beam bomnbardment have less carbon contamination than those by O{sup +} beam. In comparison to the O{sup +} ion bombardment, and the reactivity of oxygen molecules with deposited Cr atoms in the films bombarded by the Ar{sup +} ions is enhanced, and the film sample bombarded by the Ar{sup +} ions has a thicker transition layer (about one-third thicker), hence an increased adhesion of the film to the substrate. (authors)