Abstract:We have investigated the nature of the compensation phenomena that limit carrier activation in GaAs implanted with 1 MeV Si ions to a dose of 3 x 10(15) ions/cm2, and subsequently annealed at 900-degrees-C for 10 s. The depth profiles of the Si implants and the net carrier concentration, measured using secondary ion mass spectrometry and electrochemical capacitance-voltage profiling, respectively, reveal a large disparity in the region around the maximum of the Si distribution. Structural characterization, using ion channeling and transmission electron microscopy, reveals the formation of a buried band of interstitial dislocation loops in approximately the same region where the carrier concentration is highly compensated. However, previous works have shown that the remnant loops are not directly responsible for the deactivation of Si. The apparent paradox is resolved with the help of photoluminescence measurements as a function of depth performed on samples bevel-etched into a wedgelike shape. The photoluminescence experiments show that Si atoms sitting on As sites are mainly responsible for the compensation of the Si donors. Indeed self-compensation is to be expected due to the amphoteric nature of Si in GaAs. In addition, emissions corresponding to gallium-vacancy complexes, arsenic-vacancy complexes, as well as other implantation induced residual defects are observed. It is argued that a fraction of the vacancies and interstitials generated during the implantation collapse separately upon annealing giving rise to either vacancy-type defects or interstitial-type defects, respectively. The effect of these defects on the carrier concentration is discussed.

Ion implantation induced damage in relaxed Si0.75Ge0.25

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Al-implantation induced damage in 4H-SiC

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

A study of optical characteristics of damage in oxygen-implanted 6H-SiC

Optical and Microstructural Properties of Doubly Ge–Si Implanted SiO2 Layers

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

In-Situ Control of Defect Dynamics By Ellipsometry During Ion Implantation – Evolution of Disorder and Cavity Structure in Single-Crystalline Ge During Implantation of Sb Ions

Transmission Electron Microscopy and Spectroscopic Ellipsometry Studies of Damage Layer Induced by Large Tilt Angle Ion Implantation

Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

Investigations on ion irradiation induced strain and structural modifications in 3C–SiC

Ion Implantation Damage Recovery in GeSn Thin Films

A Deep Level Transient Spectroscopic Study of Boron-Ion-implanted Single Quantum Wells

Compensation Phenomena In Gaas Implanted With 1 Mev Silicon Ions

Optical Spectroscopy Study of Damage Evolution in 6H-Sic by H2+ Implantation

Irradiation-induced Defects in SiGe