Photoluminescence of Mo-Doped ZnO Thin Films

Shi Shiwei,Xu Hanshu,Li Hongxia,Zhu Yudong,Sun Zhaoqi

DOI: https://doi.org/10.3969/j.issn.1672-7126.2013.03.10

2013-01-01

Abstract:The Mo-doped ZnO films were grown by magnetron sputtering on quartz substrate.The influence of the growth conditions,including the pressure,annealing temperature,and content of MoO3 of the target,on the microstructures and photoluminescence of the films was evaluated.The Mo-doped ZnO films were characterized with X-ray diffraction,scanning electron microscopy,and photoluminescence(PL)spectroscopy.The average transmittance in the visible range(400～760 nm)was found to be over 90%.The results show that the Mo-doping and annealing strongly affect the PL of the c-axis preferentially oriented,wurtzite-phased ZnO films with grain size ranging from 40 to 80 nm.For example,an increase of the annealing temperature resulted in a red-shift of PL peak from 380 to 400 nm,or a red-shift from 470 to 525 nm.Besides,Mo-doping strongly enhanced the PL intensity.We suggest that an increase of defect density may account for the red-shift.